Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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### Transcription and Explanation for Educational Website **Title: Analyzing Transistor Q-Point in NMOS Circuits** **Objective:** To determine the Q-point for the transistor in given NMOS circuits with specified parameters. **Given Problem:** (a) Find the Q-point for the transistor in the circuit in Fig. P4.114(a) if \( V_{DD} = +12 \, \text{V} \). (b) Repeat for the circuit in Fig. P4.114(b). #### Circuit Diagrams: **Figure P4.114:** - **(a) Circuit Description:** - A resistor of \(100 \, \text{k}\Omega\) is connected in series with the drain of an NMOS transistor. - The transistor is labeled with a width-to-length ratio \(\left(\frac{W}{L}\right)\) of 20:1. - \(V_{DD}\) is connected to the top of the resistor, indicating a +12 V supply. - **(b) Circuit Description:** - A resistor of \(10 \, \text{M}\Omega\) is used. - \(V_{DD}\) is the same as in (a), +12 V. - The width-to-length ratio \(\left(\frac{W}{L}\right)\) is also 20:1. Both circuits share a common ground at the source of the NMOS transistor. #### Table 4.6: MOS Transistor Parameters - **NMOS Device:** - \( V_{TO} = +0.75 \, \text{V} \) - \(\gamma = 0.75 \, \sqrt{\text{V}} \) - \( 2\phi_F = 0.6 \, \text{V} \) - \( K' = 100 \, \mu \text{A/V}^2 \) - **PMOS Device:** - \( V_{TO} = -0.75 \, \text{V} \) - \(\gamma = 0.5 \, \sqrt{\text{V}} \) - \( 2\phi_F = 0.6 \, \text{V} \) - \( K' = 40 \, \mu \text{A/V}^2
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Transcribed Image Text:### Transcription and Explanation for Educational Website **Title: Analyzing Transistor Q-Point in NMOS Circuits** **Objective:** To determine the Q-point for the transistor in given NMOS circuits with specified parameters. **Given Problem:** (a) Find the Q-point for the transistor in the circuit in Fig. P4.114(a) if \( V_{DD} = +12 \, \text{V} \). (b) Repeat for the circuit in Fig. P4.114(b). #### Circuit Diagrams: **Figure P4.114:** - **(a) Circuit Description:** - A resistor of \(100 \, \text{k}\Omega\) is connected in series with the drain of an NMOS transistor. - The transistor is labeled with a width-to-length ratio \(\left(\frac{W}{L}\right)\) of 20:1. - \(V_{DD}\) is connected to the top of the resistor, indicating a +12 V supply. - **(b) Circuit Description:** - A resistor of \(10 \, \text{M}\Omega\) is used. - \(V_{DD}\) is the same as in (a), +12 V. - The width-to-length ratio \(\left(\frac{W}{L}\right)\) is also 20:1. Both circuits share a common ground at the source of the NMOS transistor. #### Table 4.6: MOS Transistor Parameters - **NMOS Device:** - \( V_{TO} = +0.75 \, \text{V} \) - \(\gamma = 0.75 \, \sqrt{\text{V}} \) - \( 2\phi_F = 0.6 \, \text{V} \) - \( K' = 100 \, \mu \text{A/V}^2 \) - **PMOS Device:** - \( V_{TO} = -0.75 \, \text{V} \) - \(\gamma = 0.5 \, \sqrt{\text{V}} \) - \( 2\phi_F = 0.6 \, \text{V} \) - \( K' = 40 \, \mu \text{A/V}^2
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