A common source amplifier circuit is shown in Fig. 4(a) and is operating in the saturation region. The parameters of the MOSFET are, K, = 2 mA/V², VTn = 1 V and VA = ∞ V. (i) Determine the values of VGso, Ipo and gm: (ii) Design the amplifier circuit for small-signal voltage gain |Aps| = vo/vs = 5 by determining the value of drain resistance Rp. 9+ 10V R = Rp 200kn Cc2 -o + vo Rsi = 5 kn ww R= 20 kn R2= 50kn Rs = 0.5 k Cs ww

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A common source amplifier circuit is shown in Fig. 4(a) and is operating in the saturation
region. The parameters of the MOSFET are, K, = 2 mA/V?, VTN = 1 V and V = ∞ V.
(i) Determine the values of VGso, Ipo and gm:
(ii) Design the amplifier circuit for small-signal voltage gain |Apsl = vo/vs = 5 by
determining the value of drain resistance Rp.
+ 10V
R1 =
Rp
200kn
Cc2
o+ vo
Rsi =
5 kn
ww
R=
20 kn
R2=
50 kn
Rs =
0.5 kN
Cs
Transcribed Image Text:A common source amplifier circuit is shown in Fig. 4(a) and is operating in the saturation region. The parameters of the MOSFET are, K, = 2 mA/V?, VTN = 1 V and V = ∞ V. (i) Determine the values of VGso, Ipo and gm: (ii) Design the amplifier circuit for small-signal voltage gain |Apsl = vo/vs = 5 by determining the value of drain resistance Rp. + 10V R1 = Rp 200kn Cc2 o+ vo Rsi = 5 kn ww R= 20 kn R2= 50 kn Rs = 0.5 kN Cs
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