(a) A common source amplifier circuit is shown in Fig. 4(a) and is operating in the saturation region. The parameters of the MOSFET are, K, = 2 mA/V², VTN = 1 V and VA = o V. (i) Determine the values of Vesq, Ipq and gm- (ii) Design the amplifier circuit for small-signal voltage gain |Aps| = vo/v, = 5 by determining the value of drain resistance Rp. 오+10V R = Rp 200kn Ca o+ vo Rsj = Skn wwHE R= 20 kn R = sõkn Rs= 0.5 kn -RAR- Fig. 4(a) ww ww

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(a) A common source amplifier circuit is shown in Fig. 4(a) and is operating in the saturation
region. The parameters of the MOSFET are, K, = 2 mA/V?, VTN = 1 V and Va = 0 V.
(i) Determine the values of Vasq, IDQ and gm
(ii) Design the amplifier circuit for small-signal voltage gain |Aps| = vo/v, = 5 by
determining the value of drain resistance Rp.
9+ 10V
R =
Rp
200kn
Ca
o+ vo
Rsi =
Skn
wwwHE
R=
20 kn
R =
sõkn
Rs =
0.5 kn
-RAR-
Fig. 4(a)
ww
Transcribed Image Text:(a) A common source amplifier circuit is shown in Fig. 4(a) and is operating in the saturation region. The parameters of the MOSFET are, K, = 2 mA/V?, VTN = 1 V and Va = 0 V. (i) Determine the values of Vasq, IDQ and gm (ii) Design the amplifier circuit for small-signal voltage gain |Aps| = vo/v, = 5 by determining the value of drain resistance Rp. 9+ 10V R = Rp 200kn Ca o+ vo Rsi = Skn wwwHE R= 20 kn R = sõkn Rs = 0.5 kn -RAR- Fig. 4(a) ww
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