+VDDRpRsR₁Fig. 4 6. A CG amplifier using an NMOS transistor for which g-4mA/V has a 5-kQ drain resistance RD and a 5-k2 load resistance R₁. The amplifier is driven by a voltage source having a 500 2 resistance. What is theinput resistance of the amplifier? What is the overall voltage gain G₁? By that factor must the bias currentID of the MOSFET be changed so that Rin matched Raig? (Fig. 4)

Step 1: Step 2: Step 3: Step 4:

Answered: +VDD Rp Rs R₁ Fig. 4 6. A CG amplifier…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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Common Gate MOSFET Amplifier has Select one: a. input is connected to the Gate and the output is taken from the Source b. input is connected to the Source and the output is taken from the Drain c. input is connected to the Gate and the output is taken from the Drain d. input is connected to the Source and the output is taken from the Gate 55 week 10 material Jump to... CE255/EE255 (01)- 16
a) Draw the circuit diagram of a basic current mirror circuit. Define gain and error of a current mirror. What are the sources of error in a current mirror? b) Derive the expression for the output resistance Ro and determine the % error due to the output resistance for Wilson current mirror shown in Ckt. 3 (derivation not required for %error). Mention two merits of this circuit over cascode current mirror. c) Find the currents IIN and IOUT in the current mirror circuit shown in Ckt. 4. Assume that all the transistors are matched, base to emitter voltage VBE = 0.7 V, R = 26 kΩ, and ? and ro to be infinite. d) If ?=260, find the percentage of error due to finite ? for Ckt. 4. How the error can be minimized? Draw the modified circuit and write the corresponding error expression for the modified circuit
Consider the circuit shown below of a common source amplifier with a current mirror bias. Find the following: a. Find kp and kn. b. Find the drain current of M2 given that lBIas = 2mA and Vout = 2.5V. c. Find the gm and ro of transistor M1. d. Sketch the small signal model of transistor M3 (Hint: Is there any small signal in any terminal of M3? If yes, then where is it? If no, then what happens to the small signal model?). It is given that the NMOS (M1) parameters are H.Cox = 3mA/V² , VrH,n = 0.5V and A = 0.02 and the PMOS (M2 and M3) parameters are H,Cox = 1mA/V² and VrH,p = -0.6V . The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has 1 = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. %3D 5V 5V M3 M2 VOUT IBIAS M, - VIN
1. Find the VTC of this amplifier. 2. Find the input bias voltage needed to achieve an output voltage of 3.0V and find the amplifier's gain at this bias condition. 3. Find the input bias voltage needed for maximum output voltage swing. 5 mA and VTH.n = 0.5V and the resistor RA = 1kN. Use It is given that the NMOS parameters are kn = AV = 2mV. Assume no channel length modulation. 6V VIN O VOUT RA 두
b. Design a feasible class A silicon BJT Power Amplifier that provides a high voltagegain using 15 volts supply and employs a concept to increase its loaded efficiency to50% so that little power loss is provided at the collector terminal.Given by manufacturer for safe operation, the amplifying component has a DCcurrent gain of 200 and a collector current limit of 4mA. The output stage of theAmplifier drives a headphone with 32-ohms load impedance applicable forsmartphones.
In the output characteristics of a MOSFET with low values of Vds, the value of the on-state resistance is a. Vds/Ig b. infinite c. 0 d. Vds/Id
State whether the following statements are TRUE or FALSE 1 A class A amplifier should be biased midway between saturation and cutoff. 2 The drain curves for a D-MOSFET are similar to those of a JFET when the MOS device is operating in the depletion mode. 3 The pinch-off voltage separates the ohmic and active regions for VGs =VGSoff Fill in the blanks 4 The voltage that turns on an E-MOSFET device is the.... .voltage . 5 The transfer characteristic curve is a graph of versus gate-source voltage. A certain class A power amplifier with an input signal power of 100 mW and power gain of 50 . Then the power delivered to the load is .... 6
1- Calculate the theoretical DC voltages and currents for the transistor bias circuit and compare them with the practically measured values. 2- Calculate the theoretical values of the voltage gain and compare them with the measured quantities. 3- What is the role of resistor RẺ₁ in the amplifier circuit? Drive two expressions for the voltage gain with and without the existence of RE₁ and compare between them in terms of gain value and gain stability? 4- If resistor R₂ is opened (or removed) in the circuit in procedure No. 1, what is its effect on the transistor circuit? Determine the collector current Ic and the voltage VCE in this case. 5- Calculate the current gain A₁ and the input and output impedance of the amplifier circuit in procedure No. 2.
State whether the following statements are TRUE or FALSE 1 A class A amplifier should be biased midway between saturation and cutoff. The drain curves for a D-MOSFET are similar to those of a JFET when the MOS device is operating in the depletion mode. 3 The pinch-off voltage separates the ohmic and active regions for VGs =VGsoff Fill in the blanks 4 The voltage that turns on an E-MOSFET device is the. .voltage . The transfer characteristic curve is a graph of versus gate-source voltage. A certain class A power amplifier with an input signal power of 100 mW and power gain of 50 . Then the power delivered to the load is 6. Choose the most suitable correct answer A unipolar transistor uses 7 A) Both free electrons and holes C) Only free electrons B) Only holes D) Either free electrons or holes, but not both 8 To get a negative gate-source voltage in a self-biased JFET circuit, you must have a A) Voltage divider B) Source resistor C) Ground D) Negative gate supply voltage The voltage gain…
The p-channel MOSFET in the circuit below has V = 1 V and k, = 2 mA/V² (A = 0). + 5 V 9 mA (. vout Q1 10 k VS -5 v a) Is this amplifier a common-source, common-drain, or common-gate configuration? b) Determine the d.c. biasing by calculating VsG and Vsp. c) What is the amplificr's gain A and output resistance Rout?
8. A. How does a common source amplifier compare to a common emitter amplifier in terms of its input resistance, its output resistance, and its voltage amplification? Give typical values for each type of amplifier when operating at 1mA. B. When would you choose a common emitter amplifier verses a common source amplifier and vice versa and why so? C. When would you choose a common collector amplifier and when would you choose a common base amplifier and why so? D. When would you choose an operational amplifier instead of a common emitter or common source amplifier and why so?
Consider the circuit shown below of a common source amplifier with a current mirror bias. Find the following: a. Find kp and kn. b. Find the drain current of M2 given that IBIAS = 2mA and VouT = 2.5V. c. Find the gm and r. of transistor M1. d. Sketch the small signal model of transistor M3 (Hint: Is there any small signal in any terminal of M3? If yes, then where is it? If no, then what happens to the small signal model?). It is given that the NMOS (M1) parameters are H,Con = 3mA/V? , VTH,n = 0.5V and A = 0.02 and the PMOS (M2 and M3) parameters are µ.Cox = 1mA/V? and VTH,p = -0.6V. The PMOS transistor M3 does not have channel length modulation while PMOS transistor M2 has A = 0.02. It is also given that the dimensions of M2 and M3 have equal widths of 5µm and lengths of L2 = 3µm and L3 = 1.5µm, respectively. M1 has length of L1 = 1µm and width of W1 = 2µm. 5V 5V M3 M2 VOUT VIN M1 IBIAS

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