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*5. Given the BJT transistor characteristics of Fig. 4.121: a. Draw a load line on the characteristics determined by E = 21 V and Rc = 3 k2 for a fixed-bias configuration. b. Choose an operating point midway between cutoff and saturation. Determine the value of Rg to establish the resulting operating point. c. What are the resulting values of Ic, and VCE,? d. What is the value of B at the operating point? e. What is the value of a defined by the operating point? f. What is the saturation current (lc.) for the design? g. Sketch the resulting fixed-bias configuration. h. What is the de power dissipated by the device at the operating point? i. What is the power supplied by Vcc? j. Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and (i). Ic (mA) 110 µA. 100 μΑ 10 90 µA 80 μΑ J6L

*5. Given the BJT transistor characteristics of Fig. 4.121: a. Draw a load line on the characteristics determined by E = 21 V and Rc = 3 k2 for a fixed-bias configuration. b. Choose an operating point midway between cutoff and saturation. Determine the value of Rg to establish the resulting operating point. c. What are the resulting values of Ic, and VCE,? d. What is the value of B at the operating point? e. What is the value of a defined by the operating point? f. What is the saturation current (lc.) for the design? g. Sketch the resulting fixed-bias configuration. h. What is the de power dissipated by the device at the operating point? i. What is the power supplied by Vcc? j. Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and (i). Ic (mA) 110 µA. 100 μΑ 10 90 µA 80 μΑ J6L

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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*5. Given the BJT transistor characteristics of Fig. 4.121: a. Draw a load line on the characteristics determined by E = 21 V and Rc = 3 kN for a fixed-bias configuration. b. Choose an operating point midway between cutoff and saturation. Determine the value of Ry to establish the resulting operating point. c. What are the resulting values of Ic, and VCE,? d. What is the value of B at the operating point? e. What is the value of a defined by the operating point? f. What is the saturation current (Ic..) for the design? g. Sketch the resulting fixed-bias configuration. h. What is the de power dissipated by the device at the operating point? i. What is the power supplied by Vcc? j. Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and (i). 1489 1489 6 1489 4c(mA) 110 μΑ. 100 µA 90 µA TIT 10 -80 μΑ 9 70 µA 60 μΑ 50 μΑ 40 HA 5 30 LA 3 20 LA 10 HA I =0 LA 10 15 20 25 30 VCE (V) FIG. 4.121 C14 C15 C16 O C170 0 C18
Transcribed Image Text:*5. Given the BJT transistor characteristics of Fig. 4.121: a. Draw a load line on the characteristics determined by E = 21 V and Rc = 3 kN for a fixed-bias configuration. b. Choose an operating point midway between cutoff and saturation. Determine the value of Ry to establish the resulting operating point. c. What are the resulting values of Ic, and VCE,? d. What is the value of B at the operating point? e. What is the value of a defined by the operating point? f. What is the saturation current (Ic..) for the design? g. Sketch the resulting fixed-bias configuration. h. What is the de power dissipated by the device at the operating point? i. What is the power supplied by Vcc? j. Determine the power dissipated by the resistive elements by taking the difference between the results of parts (h) and (i). 1489 1489 6 1489 4c(mA) 110 μΑ. 100 µA 90 µA TIT 10 -80 μΑ 9 70 µA 60 μΑ 50 μΑ 40 HA 5 30 LA 3 20 LA 10 HA I =0 LA 10 15 20 25 30 VCE (V) FIG. 4.121 C14 C15 C16 O C170 0 C18
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