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41. The depletion region is created by a. Ionization b. Diffusion c. Recombination d. Answers a, b, and c 42. The depletion regions is consist of a. Nothing but minority carriers b. Positive and negative ions c. No majority carriers d. Answers b and c 43. The term bias means a. A DC voltage is applied to control the operation of a device b. Neither a nor c c. The ratio of majority carriers to minority carriers d. The amount of current across a diode 44. When diode is forward-biased a. The only current is hole current b. The only current is produced by majority carriers c. The current is produced by both holes and electrons d. The only current is electron current 45. Although current is blocked in reverse bias a. There is some current due to majority carriers b. There is very small current due to minority carriers c. There is an avalanche current d. Both b and c 46. For a silicon diode, the value of the forward-bias voltage typically a. Must be greater than 0.3V b. Depends on the width of the depletion region c. Depends on the concentration of majority carriers d. Must be greater than 0.7V 47. When forward-biased, a diode a. Block current b. Has a high resistance c. Conducts current d. Drops a large voltage 48. When a voltmeter is placed across a forward-biased diode, it will read a voltage approximately equal to a. The diode barrier potential b. The bias battery voltage

41. The depletion region is created by a. Ionization b. Diffusion c. Recombination d. Answers a, b, and c 42. The depletion regions is consist of a. Nothing but minority carriers b. Positive and negative ions c. No majority carriers d. Answers b and c 43. The term bias means a. A DC voltage is applied to control the operation of a device b. Neither a nor c c. The ratio of majority carriers to minority carriers d. The amount of current across a diode 44. When diode is forward-biased a. The only current is hole current b. The only current is produced by majority carriers c. The current is produced by both holes and electrons d. The only current is electron current 45. Although current is blocked in reverse bias a. There is some current due to majority carriers b. There is very small current due to minority carriers c. There is an avalanche current d. Both b and c 46. For a silicon diode, the value of the forward-bias voltage typically a. Must be greater than 0.3V b. Depends on the width of the depletion region c. Depends on the concentration of majority carriers d. Must be greater than 0.7V 47. When forward-biased, a diode a. Block current b. Has a high resistance c. Conducts current d. Drops a large voltage 48. When a voltmeter is placed across a forward-biased diode, it will read a voltage approximately equal to a. The diode barrier potential b. The bias battery voltage

Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
7th Edition
ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Stephen L. Herman
Chapter30: Dc Motors
Section: Chapter Questions
Problem 6RQ: What is CEMF?
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41. The depletion region is created by a. Ionization b. Diffusion c. Recombination d. Answers a, b, and c 42. The depletion regions is consist of a. Nothing but minority carriers b. Positive and negative ions c. No majority carriers d. Answers b and c 43. The term bias means a. A DC voltage is applied to control the operation of a device b. Neither a nor c c. The ratio of majority carriers to minority carriers d. The amount of current across a diode 44. When diode is forward-biased a. The only current is hole current b. The only current is produced by majority carriers c. The current is produced by both holes and electrons d. The only current is electron current 45. Although current is blocked in reverse bias a. There is some current due to majority carriers b. There is very small current due to minority carriers c. There is an avalanche current d. Both b and c 46. For a silicon diode, the value of the forward-bias voltage typically a. Must be greater than 0.3V b. Depends on the width of the depletion region c. Depends on the concentration of majority carriers d. Must be greater than 0.7V 47. When forward-biased, a diode a. Block current b. Has a high resistance c. Conducts current d. Drops a large voltage 48. When a voltmeter is placed across a forward-biased diode, it will read a voltage approximately equal to a. The diode barrier potential b. The bias battery voltage c. The total circuit voltage d. OV 49. The average value of a half-wave rectified voltage with a peak voltage of 200 V is а. 127.3 V b. 141 V C. OV d. 63.7 V
Transcribed Image Text:41. The depletion region is created by a. Ionization b. Diffusion c. Recombination d. Answers a, b, and c 42. The depletion regions is consist of a. Nothing but minority carriers b. Positive and negative ions c. No majority carriers d. Answers b and c 43. The term bias means a. A DC voltage is applied to control the operation of a device b. Neither a nor c c. The ratio of majority carriers to minority carriers d. The amount of current across a diode 44. When diode is forward-biased a. The only current is hole current b. The only current is produced by majority carriers c. The current is produced by both holes and electrons d. The only current is electron current 45. Although current is blocked in reverse bias a. There is some current due to majority carriers b. There is very small current due to minority carriers c. There is an avalanche current d. Both b and c 46. For a silicon diode, the value of the forward-bias voltage typically a. Must be greater than 0.3V b. Depends on the width of the depletion region c. Depends on the concentration of majority carriers d. Must be greater than 0.7V 47. When forward-biased, a diode a. Block current b. Has a high resistance c. Conducts current d. Drops a large voltage 48. When a voltmeter is placed across a forward-biased diode, it will read a voltage approximately equal to a. The diode barrier potential b. The bias battery voltage c. The total circuit voltage d. OV 49. The average value of a half-wave rectified voltage with a peak voltage of 200 V is а. 127.3 V b. 141 V C. OV d. 63.7 V
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