4. Sketch typical output characteristics for an enhancement mode long- channel n-type MOSFET. Show the gate voltage (Vg) increasing in linear steps (e.g. Vg = 1 v, 2 V, 3 V, 4 V). Indicate on the characteristics where the onset of the saturated drain current (lesat) occurs for each curve. Give this drain voltage (Ve) in terms of threshold voltage (V:) and Vg. 5. Show the effect of channel length modulation on the curves in part (4). Explain why channel length modulation occurs and why it is more prominent in short gate-length devices than in long gate-length devices.

(iii), Why is the voltage-divider bias the preferred bias configuration? (iv) In a certain voltage-biased npn transistor, VB is 2.95 V. The DC emitter voltage is (a) 0.7 V (b) 2.95 V (c) 2.25 V (v) The emitter current is always (a) greater than the base current (b) less than the collector current (c) greater than the collector current (d) 3.65 V (d) answers (a) and (c)

Please all subpart is compulsory for like this please Asap