4. Sketch typical output characteristics for an enhancement mode long- channel n-type MOSFET. Show the gate voltage (Vg) increasing in linear steps (e.g. Vg = 1 v, 2 V, 3 V, 4 V). Indicate on the characteristics where the onset of the saturated drain current (lesat) occurs for each curve. Give this drain voltage (Ve) in terms of threshold voltage (V:) and Vg. 5. Show the effect of channel length modulation on the curves in part (4). Explain why channel length modulation occurs and why it is more prominent in short gate-length devices than in long gate-length devices.

4. Sketch typical output characteristics for an enhancement mode long- channel n-type MOSFET. Show the gate voltage (Vg) increasing in linear steps (e.g. Vg = 1 v, 2 V, 3 V, 4 V). Indicate on the characteristics where the onset of the saturated drain current (lesat) occurs for each curve. Give this drain voltage (Ve) in terms of threshold voltage (V:) and Vg. 5. Show the effect of channel length modulation on the curves in part (4). Explain why channel length modulation occurs and why it is more prominent in short gate-length devices than in long gate-length devices.

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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