3.10 An NMOS device has parameters VTN = 0.8 V, L=0.8 um, andk = 120 HA/V². When the transistor is biased in the saturation region withVas = 1.4 V, the drain current is Ip = 0.6 mA. (a) What is the channelwidth W? (b) Determine the drain current when VDs = 0.4 V. (c) Whatvalue of Vps puts the device at the edge of saturation?

Kn = (Kn' /2)×W/L Use above relation to find channel width. N mosfet will oparate in non saturation…

3.10 An NMOS device has parameters VrN =0.8 V, L =0.8 um, and = 120 uA/V. When the transistor is biased in the saturation region with Vas = 1.4 V, the drain curent is Ip = 0.6 mA. (a) What is the channel width W? (b) Determine the drain current when Vps = 0.4 V. (c) What value of Vps puts the device at the edge of saturation?

3.10 An NMOS device has parameters VrN =0.8 V, L =0.8 um, and = 120 uA/V. When the transistor is biased in the saturation region with Vas = 1.4 V, the drain curent is Ip = 0.6 mA. (a) What is the channel width W? (b) Determine the drain current when Vps = 0.4 V. (c) What value of Vps puts the device at the edge of saturation?

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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