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- The characteristic of the UJT exhibits the following values: n = 0.575, RB1 = 10 k-ohms, Vv = 1.3 V, Iv =20mA, Ip=15UA. 125V B2 B, Determine the following: a. Determine the R82 (in kilo-ohms) of the UJT b. Determine the maximum value range of R (in kilo-ohms) that will ensure proper turn-on and turn-off of the UJT c. Determine the minimum value range of R (in kilo-ohms) that will ensure proper turn-on and turn-off of the UJTFor Fixed Bias Configuration Solve for Ib, Ic and le. Atleast 2 decimal place. Be mindful of units. Assume Ic is not equal to le. 4 RC 15002 RB VCC 20V 90A/A 100k2FAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…
- Damping ratio quettion.+ IR Rs Iz V CA Vi=16V Rz VL=12V a) 14 the load current Iz varies between 0- 2 00 find the values of Rs and RL BYA keep Vz 12 volts. that will constont at b) Calculate power the of the diode. zenerIn a rectifier circuit , DC output voltage and RMS output voltage is 0.3 V & 0.55 V respectively. The form factor of this circuit is a. 3.67 b. 0.55 c. 1.35 d. 1.83
- What is mobility? O a. Ease of carrier drift O b Ease of current flow Ease of access to the junction Ease of movement ge ECE305(M) Dr MuhanmadNadcen 6 DeGive the meaning of each acronym of solid state devices. Also sketch the schematic symbol for each device. SUS Shockley diode D-MOSFET JFET SCR DIAC THYRISTOR Device TRIAC 1. 3. 4. 6. 8. 10. 12. 14. Symbol 2. 5. 7. 9. 11. 13. 15. Meaning No entryin the circuit shown below. Determine the following A)Vs (at the secondary) B)Vout(across R) C)Vrip (ripple Voltag) D) VDC full wave rectifier E) PIV(peak inverse Voltage) V1 C1 100µF 240V / 50HZ R1 104µF 1k T1 30:1