2 Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in S, is D = 6.5 x 101 em/s at a temperature of 1100°C. Assume the source provides a surface concentration of 1020 atoms/cm and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 108 atoms/cm'. Table Tabulation of Error Function Values erfiz) erfiz) 0.9340 0.9523 0.9661 0.55 0.5633 13 0.025 0.60 0.639 14 1.5 0.05 0.0564 0.65 0.6420 0.6778 0.10 0.15 0.20 0.1125 0.70 16 0.9763 0.7112 0.7421 0.1680 0.75 1.7 0.9838 02227 O.80 0.9891 025 0.2763 0.7707 19 0.9928 0.30 0.35 0.40 0.3286 0.3794 0.90 0.7970 2.0 0.9953 0.95 1.0 1.1 12 OR209 0.8427 2.2 2.4 2.6 2.8 0.9981 0.4284 0.4755 0.9993 0.45 0.9098 050 0.S205 0.9103 0.9999

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Q2. Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in Si is D = 6.5 x 10-11 mm2/s at a temperature of 950°C. Assume the source provides a surface concentration of 1020 atoms/cm3 and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 1018 atoms/cm3.
2 Transistors are manufactured by doping semiconductors.
The diffusion coefficient of phosphorus in S, is D = 6.5 x
1013 cm?/s at a temperature of 1100°C. Assume the source
provides a surface concentration of 1020 atoms/cm' and the
diffusion time is one hour. Assume that the silicon wafer
initially contains no phosphorus. Calculate the depth at
which the concentration of phosphorus will be 1018
atoms/cm.
Table
Tabulation of Error Function Values
erfiza
erfiz)
erfiz)
0.55
0.5633
1.3
0.025
0.05
0.9340
0.9523
0.9661
0.0282
0.60
0.65
0.609
0.6420
06778
0.7112
0.7421
14
0.0564
1.5
0.10
0.1125
0.70
16
0.9763
0.15
0.20
0.1680
0.75
0.80
1.7
18
0.9838
0.2227
02763
0.9891
0.25
OKS
0.7707
19
0.9928
0.30
0.3286
0.90
0.7970
2.0
0.9953
0.35
0.3794
0.95
0.8209
2.2
0.9981
0.40
0.4284
1.0
1.1
1.2
0.8427
0.8802
0.9993
0.9998
0.9999
2.4
0.45
0.50
0.4755
0.5205
2.6
2.8
09103
Transcribed Image Text:2 Transistors are manufactured by doping semiconductors. The diffusion coefficient of phosphorus in S, is D = 6.5 x 1013 cm?/s at a temperature of 1100°C. Assume the source provides a surface concentration of 1020 atoms/cm' and the diffusion time is one hour. Assume that the silicon wafer initially contains no phosphorus. Calculate the depth at which the concentration of phosphorus will be 1018 atoms/cm. Table Tabulation of Error Function Values erfiza erfiz) erfiz) 0.55 0.5633 1.3 0.025 0.05 0.9340 0.9523 0.9661 0.0282 0.60 0.65 0.609 0.6420 06778 0.7112 0.7421 14 0.0564 1.5 0.10 0.1125 0.70 16 0.9763 0.15 0.20 0.1680 0.75 0.80 1.7 18 0.9838 0.2227 02763 0.9891 0.25 OKS 0.7707 19 0.9928 0.30 0.3286 0.90 0.7970 2.0 0.9953 0.35 0.3794 0.95 0.8209 2.2 0.9981 0.40 0.4284 1.0 1.1 1.2 0.8427 0.8802 0.9993 0.9998 0.9999 2.4 0.45 0.50 0.4755 0.5205 2.6 2.8 09103
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