Answered: A state 63 meV above the Fermi level…

A state 63 meV above the Fermi level has a probability of occupancy of 0.090.What is the probability of occupancy for a state 63 meV below the Fermi level?

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 16CQ: Why does the horizontal Line in the graph in Figure 9.12 suddenly stop at the Fermi energy? Figure...

See similar textbooks

Related questions

Q: For Ge semiconductor, assume the Fermi energy level is 0.15 eV below the conduction band energy Ec.…

A: teperature, T=200 KEc=conduction bondfermi level is 0.1 ev below Ec

Q: If you know that the atomic weight of a metal is 132.9 and its density is 3 ^ gm / em 1.873 and that…

A: Given: Atomic mass = 132.9 Density = 1.873 gm/cc

Q: Each atom of gold (Au) contributes one free electron to the metal. Compute the Fermi energy for…

A: Fermi energy is one of the most important concept of Quantum Mechanics. It is basically the energy…

Q: The Fermi energy for silver is 5.5 eV. At T = 0°C, what are the probabilities that states with the…

A: The expression for the occupancy probability, The temperature,

Q: If the temperature of a piece of a metal is increased, does the probability of occupancy 0.1 eV…

Q: (Based on Neaman, Problem 4.54) - Silicon at T = 300K contains acceptor atoms at a concentration of…

Q: If the energy gap for an insulating material is 4.5 eV, what is the probability that an electron…

A: Convert the temperature in Kelvin. T=100+273 K=373 K Find the probability of an electron promoted to…

Q: Calculate the value of the Fermi energy for a specific metal when it contains 2.54x102 free…

A: Given quantities : free electron density (n) = 2.54×1028 per cubic meter Let , the Planck's…

Q: The Fermi energy of aluminum is 11.6 eV; its density and molar mass are 2.70 g/cm3 and 27.0 g/mol,…

Q: Consider a copper wire that is carrying, say, a few amperes of current. Is the drift speed vd of the…

A: The drift velocity is the average velocity that a particle, such as an electron, attains in a…

Q: Gold has an atomic mass of 197 u, a density of 19.3 x 10° kg/m³, a Fermi energy of 5.54 eV, and a…

A: Given data: The fermi energy is Ef=5.54 eV. The resistivity of gold is ρ=2.04×10-8 Ω·m. Atomic mass…

Q: Consider a semiconductor bar with w-0.1 mm, d-10 um and L-5 mm. for B-104 Wb/cm2, and a current of 1…

A: Solution: Given that w =0.1 mmd=10 μmL=5 mmB=10-4 Wb/cm2

Q: 010/ At room temperature (300 K) with the Fermi level located exactly in the middle of the bandgap,…

Q: Consider the silver in the metallic state with one free electron per atom. Calculate the Fermi…

Q: Calculate the value of the Fermi energy for a specific metal when it contains 2.54x1028 free…

A: Given : n = 2.54 x 1028 m-3 me = 9.11 x 10-31 kg h = 6.63 x 10-34 J.s

Q: 9.) (Based on Neaman, Problem 4.58) - Determine the Fermi energy level with respect to the valence…

A: Solution:-

Q: B/ Find the resistivity of intrinsic Silicon if n=1 516x10"c and p=1300 if donor -typc impurity is…

A: Given:

Q: Q. 2. In a P-N junction diode, width of depletion layer is 0 · 5µm and potential barrier is 0-5V.…

Q: At non-zero tempertures the probability of filling Fermi energy level is

A: At non-zero temperature, the probability of filling Fermi energy level can be given as,…

Q: Pure germanium has a band gap of 0.67 eV. The Fermi energy is in the middle of the gap. (a) For…

A: The fermi-function for a semiconductor which denotes the probability of occupying a level of energy…

Q: What is the number of occupied states in the energy range of 0.0300 eV that is centered at a height…

Q: A conductive wire has a conductivity of (0.649 × 10^-8) at room temperature are (5.8 x 1028)…

Q: At T = 300 K, how far above the Fermi energy is a state forwhich the probability of occupation by a…

A: Given,

Q: For silicon at T = 300 K with donor density N_D = 1 * 10^9 cm^{-3} and acceptor density N_A = 0,…

A: The intrinsic charge density for silicon at room temperature is ni= 1.5*10¹⁰ cm^(-3) Nd = 1*10⁹…

Q: The Fermi energy for copper is 7.00 eV. For copper at 1000 K, (a) find the energy of the energy…

A: Given information: Here, Ef is the copper’s fermi energy, f(E) is the probability of the energy…

Q: Where is the fermi level located in the p-type semiconductor

A: In a p-type semiconductor, there are more holes in the valence band than…

Q: For the free electrons in a solid, what is the value of the E/EF ratio knowing that the occupancy…

A: According to question we need to find E/Ef .

Q: What is the probability that a state 0.0620 eV above the Fermi energy will be occupied at (a) T= 0 K…

A: a) Fermi level is the highest energy state occupied by electrons in a material at absolute zero…

Q: For a solid metal having a Fermi energy of 8.500 eV, what is the probability, at room temperature,…

A: Given Data: The energy occupied by an electron is, E=8.520 eV The Fermi energy is, Ef=8.500 eV The…

Q: What is the Fermi energy of gold (a monovalent metal with molar mass 197 g/mol and density 19.3…

A: It is given that

Q: For the free electrons in a solid, what is the value of the E/EF ratio knowing that the occupancy…

Q: A PN junction in series with a resistor of 100N and current of 100mA flows. If the voltage cross the…

A: GivenResistor(R)=100Ωcurrent(i)=100mAat t=0, the reverse current is fiows through the diodethe…

Q: Consider a silicon pn junction at T = 300 K. Assume the doping concentration in the n region is 1020…

Q: The probability for an electron to occupy a level at 120 °C is(2×10-6). Find the location of this…

Q: cm^{-3} if EC−EF=0.3eV. Values within 5% error will be considered correct.

A: Given:- T=300 K Ec-EF =0.3 eV Values within 5% error will be considered correct. Find:- calculate…

Q: Since the Fermi energy level of zinc is EF = 9.47 eV, what is the number of electrons per unit…

A: Given data The Fermi energy level of zinc is EF = 9.47 eV = 9.47 x 1.6 x 10-19 J = 15.152 x 10-19 J…

Q: The occupancy probability at a certain energy E1 in the valence band of a metal is 0.60 when the…

A: The probability that an energy state E is occupied by an electron in a solid is given as

Q: As the doping density of a semiconductor increases, the :mobility generally Stays the same Increases…

A: As the doping density of a semiconductor increases, the :mobility generally decreases.

Q: The probability that a state at Ec+kT is occupied by an electron is equal to the probability that a…

A: Let us assume the Fermi-Dirac distribution function is, fF=exp-E-EFkT ..... (1) Where, f F…

Q: Silver melts at 961°C. At the melting point, what fraction of the conduction electrons are in states…

Q: Silver contains 5.8 * 1028 free electrons per cubic meter. At absolute zero, what is the Fermi…

A: Free electron density in silver (n)=5.8 * 1028 per cubic meter mass of electron (m)=9.1×10-31Kg…

Q: Consider silicon at T=300 k. A Hall Effect device is fabricated with the following parameters:…

Q: At T = 300 K, how far above the Fermi energy is a state for which the probability of occupation by a…

Q: Consider a silicon pn junction at T = 300 K with an acceptor doping concentration (1 x 101cm-3) and…

A: Write the expression for the built-in potential barrier. Here, k represents the Boltzmann constant,…

Question

A state 63 meV above the Fermi level has a probability of occupancy
of 0.090.What is the probability of occupancy for a state
63 meV below the Fermi level?

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

This is a popular solution!

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step 3

VIEW

Trending now

This is a popular solution!

Step by step

Solved in 3 steps with 3 images

SEE SOLUTION Check out a sample Q&A here

Knowledge Booster

Learn more about

Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, physics and related others by exploring similar questions and additional content below.

Similar questions

Starting with the Fermi energy given in Table , estimate the number of conduction electrons per atom for aluminum, which has density 2.70 x 103 kg/m3 at T = 300 K
Q10: Find the accurate probability for an electron to occupy a level 0.2eV under the Fermi level at temperature 50°C ? Compare the result with approximate equation?.
The Fermi energy is the highest energy of an electron at 0k.At what temperature can we expect a 10% probability that the electrons in silver have an energy that is 2% above the Fermi energy of 5.5eV?
The fermi energy is the highest energy of an electron at 0K. At what temperature can we expect a 50% probability that the electron is silver have an energy that is 1% above the fermi energy of 5.5eV?
The probability of an electron occupying a state 3kT above the Fermi energy in a particular semiconducting sample is 4.74 x 10-2. What is the probability of a hole occupying a state 3kT below the Fermi energy in the same sample?
Copper has density of 8.95 X10³ kg/m ²³ & an electrical conductivity 604 X107 ohm os out room Temperature Calculate (1) fermi energy mass > (el) The fermi velocity, wil) the mean free path at the fermi level. Atomic weight of Copper is 63.54. PAGE
Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?
The Fermi energy is the highest energy of an electron at 0K. At what temperature can we expect a 10% probability that the electrons in silver have an energy that is 1% above the Fermi energy of 5.5 eV?
Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T= 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The acceptor concentration?
Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The hole concentration?
The probability that a state at Ec+kT is occupied by an electron is equal to the probability that a state at Ey-kT is empty. Determine the position of the Fermi energy level as a function of Ec and Ey.
Consider a sample of GaAs at 300 K in which the Fermi level is 0.40 eV below the bottomof the conduction band. For the following questions, the Boltzmann approximation isvalid.a) What is the probability the energy state Ec is occupied by an electron?b) What is the probability a state E = 0.20 eV above the valence band is empty?c) What is the carrier concentration of electrons in this sample? Holes?