1600° 1538°C 1493°C In the diagram, the letter L indicates that it is a liquid. Indicate its components in the upper region where only L is indicated. The iron-iron carbide phase diagram. Temperature (°C) 1400 8 1394°C y+L 1200 2.14 y, Austenite 10000 912°C 800a 0.76 0.022 600 400 (Fe) a, Ferrite Composition (at% C) 15 1147°C a + Fe3C 2 3 Composition (wt% C) L 2500 4.30 2000 y + Fe3C 727°C 1500 Cementite (Fe3C) 1000 4 5 6 6.70 Temperature (°F)

PART B Q1 (a) Figure 5 shows the type of point defects that may presence in a metal. Compare the characteristics between the point defects occurred at point 1 and point 3. Figure 5: Possible point defects in a metal material (b) The equilibrium number of vacancies in an aluminium plate at the temperature of 500 °C is 7.57 × 10²3 m³³. The atomic weight and density for aluminium are 26.98 g/mol and 2.62 g/cm³, respectively. Calculate the activation energy for vacancy formation in aluminium. (c) Describe with illustration a point defect that may presence in silicon dioxide crystal structure. Q2 (а) Discuss with suitable example the influence of crystal structure of the solvent iron, Fe lattice to the diffusivity of carbon atom in the formation of a steel alloy. (b) Discuss the possible diffusion that take places in the making of electronic integrated circuit wafer with help of suitable diagram.

The maximum solid solubility of carbon in ferrite occurs at 0.022 wt% C and 727 ° C, the eutectoid composition is 0.76 wt% C, the maximum solid solubility of carbon in austenite occurs at 2.14 wt% C and 1147 ° C, and the cementite composition is 6.7 wt% C. For 2122 g of a 3.2134 wt% C steel at 726 ° C, what will be the mass of carbon present as part of a compound?(a) 67.9 g(b) 74.2 g(c) 58.7 g(d) 83.5 g

The mixed oxide ceramic Tl2Ca2Ba2Cu3O10+x has zero electrical resistance at 125 K. Calculate the average oxidation number of the copper in this compound if x = 0.50 and thallium is in the 13 oxidation state.

The equilibrium density of vacancies ns is given by Nexp(-Es/kT) , where N is the density of semiconductor atoms and Es is the energy of formation. Calculate ns in silicon at 27° C, 900 ° C, and 1200° C. Assume Es = 2.3 eV.

Most ceramic materials have low thermal conductivities because(a) Electron mobility is strongly restricted due to their strong ionic-covalent bonding.(b) False, in general they are excellent thermal conductors (they are used in ovens).(c) Electron mobility is dependent on T and therefore they are poor conductors at high temperatures.(d) Electron mobility is highly restricted by secondary bonds.

Please do not give solution in image format thanku Minerals are grouped by their chemical composition. The major groups or families of mineralsinclude the Silicates, Oxides, Sulfates, Sulfides, Carbonates, Native elements, and the Halides.Match the following chemical formulas from a variety of minerals to the mineral family to which theybelong based on their chemical formula.Fe203PbSCaCO3(Mg,Fe)2SiO4AuCaSO4 H2ONaClOxidesSulfidesCarbonatesSilicatesNative elementsSulfates[Choose ]

Determine the crystal structure for the following: (a) a metal with a0 = 4.9489 Å, r = 1.75 Å and one atom per lattice point; and (b) a metal with a0 = 0.42906 nm, r = 0.1858 nm and one atom per lattice point.

Metallurgical and materials engineers are often called upon to design alloys with high strength, but with some ductility and toughness; typically, ductility is sacrificed when an alloy is reinforced. Various hardening techniques are available to an engineer, and often the selection of the alloy depends on the material's ability to be adapted to the mechanical characteristics required for a specific application. There are several methods to increase the hardening of metals, each suited to different applications and strength requirements. Some of these methods include heat treatment, such as annealing and quenching, which alter the crystalline structure of the metal to make it harder. Additionally, cold working, such as cold rolling and forging, can increase the metal's strength by reducing its grain size and increasing its dislocation density. The introduction of alloying elements or the controlled precipitation of particles can also strengthen a metal. Each technique is chosen based on…

The band gap for the elemental semiconductor silicon is 1.11 eV. That energy corresponds to what wavelength and region of the electromagnetic spectrum? (1eV = 1.602 x 10-19J) Group of answer choices 1117 nm; Infrared 1117 nm; Ultra-violet 1.117 x 10E(-6) nm; Infrared 1.778 x 10E(-19) J; Ultra-violet