1.4 Suppose the reflected light produced by a single multilayer mirror as a function of wavelength (Fig. 1.7) is approximated by a Gaussian where FWHM R(A) = Roe 2.3550. Show that the full width at half maximum is FWHM/√N after N reflections. Median wavelength of EUV reflectivity of mask: Relatvie Reflectivity (%) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 M Am = (A₁+ A₂)/2 Ap Am Full Width at half maximum (FWHM) Ap Peak wavelength Wavelength (nm) Figure 1.7 Curve showing the definition of median wavelength (m) and how it can differ from the peak wavelength (Ap).27

If the reflection coefficient is 0.75, estimate the return loss for the device

The radiation resistance of a circular loop of one turn is 0.01 ohm. Theradiation resistance of five tums of such a loop will be.

n 10 (based on material in Unit 23) Based on the band theory of solids, briefly explain the difference in electrical conductivity between semiconductors and insulators at a given temperature.

Q. 14. When constructing volt time curve, if flashover occurs on the tail side of the wave, the point on the curve will have a voltage magnitude equal to: A The applied wave peak B. The applied wave flashover point C. The applied wave peak multiplied by a factor of 0.9 D. The applied wave flashover point multiplied by a factor of 0.9 itte waiml|

c) Evaluate the light collecting capacity of a silica fibre with its core refractiveindex (n1) of 1.48 and cladding refractive index of 1.46. Evaluate the newvalue of “n1” in order to change the light collecting capacity to 0.23.

Which is the result of a radio wave being absorbed as it crosses materials in Ex. 2.1 - The amplitude of the wave Select one: a. is Cancelled or Null b. Decreases c. Doubles d. Increases

What is the Jones Matrix of a quarter wave plate that is 45° rotated to the horizontal direction? Explain every term.

How did you calculate the angles of IL,Ic,Ir & It?

You have learned that if the energy of radiation incident on semiconductor is equal to or above the bandgap energy, the light will be absorbed. For the various radiation types in the table below, state if the radiation will be absorbed or passed through each semiconductor. PROBLEM 5 Absorb No Semiconductor Incident Frequency Yes GaAs 5x1017 Hz Ge 2x1014 Hz Ge 1013 Hz Si x1016 Hz 5x1010 Hz PbS List of band gaps of semiconductor materials. Band gap (eV) @ 302K Group Material Symbol IV Diamond 5.5 IV Silicon Si 1.11 IV Germanium Ge 0.67 III-V Gallium(III) nitride GaN 3.4 III-V Gallium(III) phosphide GaP 2.26 III-V Gallium(II) arsenide GaAs 1.43 IV-V Silicon nitride Si,NA IV-VI Lead(II) sulfide PbS 0.37 IV-VI Silicon dioxide Sio, Copper(l) oxide Cu,0 2.1