1. Determine I_E, I_B, I_C, V_C, V_E, V_B, and V_CE. 2. Find I_C,Q when the BJT is at the edge of saturation.

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cuicuit designed in winknown isubuenit, va resistance R = 2.8K2 and two identical silicon BITS T1 and 12 with 72 and T2 with forward gains BF = 200. The supply voltage Vcc =-25 volts Vcc=25 volts Sub-circuit JICA T2 IB₁1 IB12 VIR R = 28K2 VIC, 2 GIND IB, 1 and Ic, s designate the base and collector current of T2 vespectively where as the courrents IB,₁2 and IG2 designate the base and the collector currents of T2 respectively. T2 and 12 operate in forward active mode Assume that IB, 1 and IB₁2 are equal · VBE, on = 0.8 molt (Threshold woltage) (a) What is the value of the current IR through vesistance R.? (MA) (b) what is the value of the base vaurrent IB, 1? (MA) (c) what is the value of the collector Ic₁₁? (MA) (d) The evicuit idesigned using Resistance Rand Transistors T₁ and To performs an electronic function to connect to sub circut which function is it?