1) Copy the diagram of a semiconductor junction diode. Show its p-type and n-type regions and the depletion region. (a) When the diode is forward biased: What happens to the barrier potential? What happens to the depletion region? Indicate on your diagram the directions in which the holes and electrons move. (b) When the diode is reverse biased, Why the diode becomes less conductive

1) Copy the diagram of a semiconductor junction diode. Show its p-type and n-type regions and the depletion region. (a) When the diode is forward biased: What happens to the barrier potential? What happens to the depletion region? Indicate on your diagram the directions in which the holes and electrons move. (b) When the diode is reverse biased, Why the diode becomes less conductive

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

See similar textbooks

Similar questions

What is the difference between a diode and rectifier?
Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSE
Consider the circuit shown in Figure 2. The cut-in voltage of each diode is . Let and assume both diodes are conducting. Determine if this is a valid assumption and explain your answer. And calculate the values of IR, ID, Ip2, and V.. Rj =1.7 kQ ww VB =1 V D1 Dz R2D 4 kQ Figure 2
a) What is n-type semiconductor materials? What are the majority and the minority cariers? b) What is p-type semiconductor materials? What are the majority and the minority cariers? c) What is depletion region of a p-n junction diode? d) Describe in your own words the forward-bias and reverse- bias conditions of a p-n junction diode. e) Draw a Diode Symbol and label the anode and the cathode. Si Ge 2 ka f) Find V, in the circuit shown in +20 V 2 k2 15V Fig. Fuad Al-Mannai EENG261 Page 1
A. In your own words and with the aid of suitable diagrams, describe the following: a) The zener diode and its characteristics. b) Design a limitter circuit using diodes to limit the output voltage to 4.7V during the positive signwave and to -6.7V in the negative signwave. B. Consider the following circuit. Suppose that diode D1 is ideal. a) Give the state of the diode D1: conductive or blocking. Explain. b) Calculate the current flowing through D1. c) Calculate the voltage VR2 across the resistance R2. 1kQ D1 R1 R2 1) ImA 10V 4KQ C. In the circuit shown below the knee current for the ideal Zener diode is 10 mA. Calculate the minimum value of load resistance RL in order to maintain 5 volts across the load resistance RL. 1002 IL 10V V, = 5V A R
In your own words and with the aid of suitable diagrams, describe the following: Explain what the barrier potential is and how it is developed in pn junction diode. What is the typical value of the barrier potential for a silicon diode?
2-2VOLTAGE-CURRENT CHARACTERISTICOF A DIODE 1.Explain how to generate the forward-bias portion of the characteristic curve. 2.What would cause the barrier potential of a silicon diode to decrease from 0.7 V to 0.6 V?
How tunneling takes place in Tunnel diode. Show and explain the V-I Characteristics of Tunnel diode with necessary diagrams.
4. If the diode is open in the circuit, the load voltage is? 5. If the resistor is ungrounded in the circuit, the voltage measured with a DMM between the top of the resistor and ground is closest to? 6. The load voltage measures 12 V in the circuit. The trouble may be? 7. Using the third approximation in the circuit, how low must R, be before the diode's bulk resistance must be considered? + Vs RL 1 k2 12 V Figure
Explain the V-I characteristics of a P-N junction diode when it is connected in forward bias and reverse bias. A PN junction diode gives a current of 50 mA at a room temperature of 20 dergee C when the forward bias voltage is 200mV. Determine (a) the saturation current with a negative bias (b) the diode current when room temperature is 30 degree C , and (c) diode current at a forward bias voltage.
0:- Consider the circuit in Figure a) What type of circuit is this? b) Find and Sketch the voltage waveform across RL, assume the diodes are practical. c) If 100uf capacitor parallel with the resistor, calculate the ripple is connected factor I O o D
Electrical solve the two Parts or dislike A) Draw the characteristic curve of a Germanium and a Silicon diode on the same axis, clearly indicating the threshold voltage and the break down region of the diode B) Draw, with the aid of a circuit diagram what do we assume an ideal silicon diode acts like in characteristic curves you have just drawn.