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- a) What do you understand by energy gap and how it varies in conductors, semiconductors and insulators? What is an intrinsic semiconductor? How is its electrical conductivity changes with temperature which is at absolute zero? What is meant by doping? How is Ge(Germanium) made n –type semiconductor? Explain with the help diagram. Compare the resistance of a p-n junction diode connected in forward bias to its resistance when connected in reverse bias? Use forward and reverse bias circuits to explain? How it can be used in electrical circuitsGiven below are two statements: Statement I: PN junction diodes can be used to function as transistor, simply by connecting two diodes, back to back, which acts as the base terminal. Statement II: In the study of transistor, the amplification factor β indicates ratio of the collector current to the base current. In the light of the above statements, choose the correct answer from the options given below. a. Statement I is false but Statement II is true. b. Both Statement I and Statement II are true. c. Statement I is true but Statement II is false. d. Both Statement I and Statement II are false.Silicon is doped with phosphorus atoms (column V of Mendeleev table) with a concentration of 1018 cm-3 a- What is, at 27 °C, the electron density in doped Si. Use this result to derive the hole density. Which type of semiconductor is obtained? b- Calculate, at 27 °C, the position of the Fermi level EF and plot the band diagram.
- A20. An intrinsic silicon semiconductor is uniformly doped with acceptors to a level of 2x1017 cm-³. At room temperature, the electron concentration in this semiconductor is found to be 5x10² cm-3. What is the intrinsic carrier concentration of this semiconductor at room temperature and describe qualitatively how would the electron concentration change if the temperature increased slightly?The Type K thermocouple has a sensitivity of about 41 micro-Volts/℃, i.e. for each degree difference in the junction temperature, the output changes by 41 micro-Volts. If you have a 32-bit ADC, what is the smallest temperature change you can detect if the ADC range is 10 V? Try leaving the answer as a decimal with significant digits: e.g., 0.00004100.Q1/ Consider the depletion load transistor based at Voo - 3 V. Vtn=-2 V, Vtno 0.7 V, (W/L)p-10, such that the maximum power dissipation is 320 μW, when VI-3 V. And Kn=60μA/V, Determine the output voltage.
- QA: Pure silicon has carrier ch arge density 10 cm. The mopility of un = 4000cm² (Vs), and µp = 2000cm² (Vs)1 A- Find the conductiviry in pure silicon. choice answer (i – 0.96 S cm ii- 0.22 S cm B- Find resistivity. chooce answer (i– 4.52cm ü- 1.042cm iii– 20.32cm). -1 iii – 0.05 S cm).a) What is a Field effect transistor? Give its description and classification.b) Explain the working of n-channel / p-channel Junction Field Effect Transistor with its drain characteristics.Question 7 A uniform piece of semiconductor is 1 μm long. If the low-field mobility is equal to 1350 cm²/Vs and the saturation velocity of the carriers is 1 x 107 cm/s, calculate the maximum allowable voltage such that the effective mobility is only 20% lower than low-field mobility. V = mv Round your answer to 2 decimal places.
- Consider an approximate model of the epitaxial resistivity in a silicon power transistor:A pyramid structure with a square base has a resistor in every edge of the structure.The structure of the model is shown in Figure 3 attached. (a) Based on the description above, draw the relevant structure and include relevant resistors in your diagram.(b) Suppose the value of all resistors is R Ω, calculate the total resistance viewing from any of the a-x pairs.(c) Is the total resistance similar for all possible vertex pairs? Verify your statement above by including relevant calculation proof.6V ol +T;> T The output signal given above is taken from a circuit with the frequency of the input signal 100 Hz, the capacity of the capacitor used is 4µF, and the value of the ripple factor is 1.21. Answer the following questions using the ones given. The diodes used are silicon diodes, their operating voltages are 0.7 volts, and can be omitted because their resistance is very small. a) Write down the purpose of the circuit that will give the output signal above. b) Calculate the effective value of Ripple voltage V_rms for this circuitA silicon BJT is connected as shown in the figure below with a current transfer ratio B = 150, V_ BE = 0.7 V, V_CE = 1.5 V, if the base current I_B = 30 µA, the emitter voltage V_E = 1 V, and VCC = 10 V, use circuit theories and principles to determine: Vec Re- R2. R1. Rg. Choose.. The value of the resistor R_B (k Choose... + The value of the resistor R__E (k Choose... The value of the Collector Choose... current I_C (mA). The value of the Emitter current Choose... + L_E (mA). The value of the resistor R_2 (k Choose... + N) if R_1 = 2 k %3D