Consider an approximate model of the epitaxial resistivity in a silicon power transistor: A pyramid structure with a square base has a resistor in every edge of the structure. The structure of the model is shown in Figure 3 attached. (a) Based on the description above, draw the relevant structure and include relevant resistors in your diagram. (b) Suppose the value of all resistors is R Ω, calculate the total resistance viewing from any of the a-x pairs. (c) Is the total resistance similar for all possible vertex pairs? Verify your statement above by including relevant calculation proof.
Consider an approximate model of the epitaxial resistivity in a silicon power transistor: A pyramid structure with a square base has a resistor in every edge of the structure. The structure of the model is shown in Figure 3 attached. (a) Based on the description above, draw the relevant structure and include relevant resistors in your diagram. (b) Suppose the value of all resistors is R Ω, calculate the total resistance viewing from any of the a-x pairs. (c) Is the total resistance similar for all possible vertex pairs? Verify your statement above by including relevant calculation proof.
Chapter2: Infrared Spectroscopy
Section: Chapter Questions
Problem 8P
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Consider an approximate model of the epitaxial resistivity in a silicon power transistor:
A pyramid structure with a square base has a resistor in every edge of the structure.
The structure of the model is shown in Figure 3 attached.
(a) Based on the description above, draw the relevant structure and include relevant resistors in your diagram.
(b) Suppose the value of all resistors is R Ω, calculate the total resistance viewing from any of the a-x pairs.
(c) Is the total resistance similar for all possible vertex pairs? Verify your statement above by including relevant calculation proof.
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