Essential University Physics (3rd Edition)
3rd Edition
ISBN: 9780134202709
Author: Richard Wolfson
Publisher: PEARSON
expand_more
expand_more
format_list_bulleted
Question
Chapter 37, Problem 28E
To determine
The band gap of
Expert Solution & Answer
Want to see the full answer?
Check out a sample textbook solution
Students have asked these similar questions
Question 11:
A p-n photodiode is fabricated from a semiconductor with band gap of 2.8 ev. Can it detect a
wavelength of 6000 nm?
Two diodes are connected in parallel as shown below:
p(0.c.) = 0.15
p (s.c.) = 0.25
A diode may fail in one of the two ways: by short-circuiting or by open-circuiting. What is
the probability that the two-diode arrangement will work as a diode?
A pn junction diode and a Schottky diode have equal cross-sectional areas and have forward-bias currents of 0.5 mA. The reverse-saturation current of the Schottky diode is The difference in forward-bias voltages between the two diodes is 0.30 V. Determine the reverse-saturation current of the pn junction diode.
Chapter 37 Solutions
Essential University Physics (3rd Edition)
Ch. 37.1 - Prob. 37.1GICh. 37.2 - If a scientist uses microwave technology to study...Ch. 37.3 - Prob. 37.3GICh. 37 - If you push two atoms together to form a molecule,...Ch. 37 - Prob. 2FTDCh. 37 - Prob. 3FTDCh. 37 - Does it make sense to distinguish individual NaCl...Ch. 37 - Prob. 5FTDCh. 37 - Prob. 6FTDCh. 37 - Radio astronomers have discovered many complex...
Ch. 37 - Prob. 8FTDCh. 37 - Prob. 9FTDCh. 37 - Prob. 10FTDCh. 37 - Prob. 11FTDCh. 37 - Prob. 12FTDCh. 37 - Prob. 13FTDCh. 37 - Prob. 14FTDCh. 37 - Prob. 15FTDCh. 37 - Prob. 16ECh. 37 - Prob. 17ECh. 37 - Prob. 18ECh. 37 - Prob. 19ECh. 37 - Prob. 20ECh. 37 - Prob. 21ECh. 37 - Prob. 22ECh. 37 - Prob. 23ECh. 37 - Prob. 24ECh. 37 - Prob. 25ECh. 37 - Prob. 26ECh. 37 - Prob. 27ECh. 37 - Prob. 28ECh. 37 - Prob. 29PCh. 37 - Prob. 30PCh. 37 - Prob. 31PCh. 37 - Prob. 32PCh. 37 - Prob. 33PCh. 37 - Prob. 34PCh. 37 - Prob. 35PCh. 37 - Prob. 36PCh. 37 - Prob. 37PCh. 37 - Prob. 38PCh. 37 - Prob. 39PCh. 37 - Prob. 40PCh. 37 - Prob. 41PCh. 37 - Prob. 42PCh. 37 - Prob. 43PCh. 37 - Prob. 44PCh. 37 - Prob. 45PCh. 37 - Prob. 46PCh. 37 - Prob. 47PCh. 37 - Prob. 48PCh. 37 - Prob. 49PCh. 37 - Prob. 50PCh. 37 - Prob. 51PCh. 37 - Prob. 52PCh. 37 - Prob. 53PCh. 37 - Prob. 54PCh. 37 - Prob. 55PCh. 37 - The transition from the ground state to the first...Ch. 37 - Prob. 57PCh. 37 - Prob. 58PCh. 37 - Youre troubled that Example 37.1 neglects the mass...Ch. 37 - Prob. 60PCh. 37 - The Madelung constant (Section 37.3) is...Ch. 37 - Prob. 62PCh. 37 - Prob. 63PCh. 37 - Prob. 64PCh. 37 - Prob. 65PCh. 37 - Prob. 66PCh. 37 - Prob. 67PCh. 37 - Prob. 68PPCh. 37 - Prob. 69PPCh. 37 - Prob. 70PPCh. 37 - Prob. 71PP
Knowledge Booster
Similar questions
- Because of its semiconducting properties, CdSCdS is sometimes used in electronic devices. The band gap energy for CdSCdS is 2.40 eVeV . What is wavelength of a photon with this energy?arrow_forwardP 8:04 docs.google.com a 0 20% @ 3G Asiacell In. For the given circuit for a 40 V (p-p) sinusoidal input vi, what is the value of vi at which the clipping begins? V=5V. NOTE: use ideal diode * Оз Clipping doesn't occur 25 -20 5 v Page 2 of 2arrow_forwardThe bandgap of a bulk semiconductor is 1.55 eV and the effective mass of the exciton is 9.109×10-32 kg. What is the wavelength of the fluorescence photon in the bulk semiconductor?arrow_forward
- An LED emits light with a wavelength of 500 nm (500x10-9m). What is the band gap energy in electron Volts? Hint: recall Eq. (2) and 1 eV= 1.6 x10-19 J 1.2 eV 2.5 eV 3.3 eV 4.1 eV 5.5 eVarrow_forward. When UV photons with 380 nm wavelength strike on a semiconductor, a red photon emission from the semiconductor is observed. Explain the photon emission process in this semiconductor on the band diagram.arrow_forwardA p-n photodiode is fabricated from a semiconductor with band gap of 2.8 eV. Can it detect a wavelength of 6000 nm?arrow_forward
- Semiconductor LED's have a slow response tiте аnd hencе a low frequency operation and low band width because: а. their produced photons are mainly due to the diffusion process of the injected carriers b. Their produced photons are due to injected electrons having a low drift velocity only in n-side of the junction С. Their produced photons are due to injected holes having a low drift velocity only in p-side of the junction d. Their produced photons are due to injected electrons and holes having a low drift velocity due to low biasing voltage.arrow_forwardA diode detector is used to detect an amplitude modulated wave of 60% modulation by using a condenser of capacity 250 pF in parallel with a load resistance 100KN ohm. Find the maximum modulated frequency which could be detected by it.arrow_forwarda) for Ge, Si and GaAs. (Why is ni highest for Ge? Why is it lowest for GaAs?) Explain qualitatively the differences in intrinsic carrier concentrations b) Explain qualitatively why ni increases with increasing temperature. 1500 T(*C) 1019 1000 500 200 100 27 List of band gaps of semiconductor materials. 1018 Band g @ 302 Group Material Symbol 1017 IV Diamond 5.5 Ge IV Silicon Si 1.11 1016 IV Germanium Ge 0.67 IlI-V Gallium(II) nitride GaN 3.4 1015 III-V Gallium(III) phosphide GaP 2.26 III-V Gallium(III) arsenide GaAs 1.43 Si 1014 IV-V Silicon nitride Si,N, 5. IV-VI Lead(II) sulfide PbS 0.37 1013 IV-VI Silicon dioxide SiO2 Copper(1) oxide 2.1 MAIM 1012 1011 1010 GaAS 109 108 107 106 0.5 1.0 1.5 2.0 2.5 3.0 1000/T(K ) Intrinsic carrier density n; (cm3)arrow_forward
- If the diode for the given circuit below is a Silicon diode, how much is the maximum positive voltage (taken at the series connection of the diode and the battery)? R1 1 V1 1kQ D1 7.5V Vout 1kHz 4 0° V2 I 3.6V Answer:arrow_forwardCalculate the hole velocity when a voltage of 5 V is applied through a semiconductor bar as below: V + 0.05 cm 0.55 cm (Mobility of hole is given as 450 cm²/Vs) Select one: A. 14500 cm/s B. 4090 cm/s C. 4500 cm/s D. 13180 cm/s 0.3 cmarrow_forwardA Fabry–Perot laser diode is operating at 1750 nm. The Laser Diode has a cavity length of 400 μm. Therefractive index of semiconductor used is approximately 3.2 and dn/dT= 2.5 × 10-.?^-1. Find the shiftin the emission wavelength for a given mode per unit temperature change.arrow_forward
arrow_back_ios
SEE MORE QUESTIONS
arrow_forward_ios
Recommended textbooks for you
Physics for Scientists and Engineers with Modern ...PhysicsISBN:9781337553292Author:Raymond A. Serway, John W. JewettPublisher:Cengage Learning
Physics for Scientists and Engineers with Modern ...
Physics
ISBN:9781337553292
Author:Raymond A. Serway, John W. Jewett
Publisher:Cengage Learning