At T=300K, the electron concentration of a semiconductor materialis n, = 10" cm*. The bandgap energy E=1.leV, Nc =2.8×10" cm, andN, =1.0x10" cm³.(1) Determine the hole concentration P. . Is this n-type or p-typesemiconductor?(2) Determine E F – EF ;(3) What is the dopant concentration, N, or .? (Please evaluate N, or N.)

Given-Eg=1.1 eVNC=2.8×1019cm-3=2.8×1025 m-3Nv=1×1019cm-3=1×1025 m-3n0=1011 cm-3=1017m-3…

At T=300K, the electron concentration of a semiconductor material isn, = 10" cm. The bandgap energy Eg=1.1eV, Nc = 2.8×10" cm³ , and N, =1.0×10" cm³. (1) Determine the hole concentration P.. Is this n-type or p-type semiconductor? (2) Determine EF – E; (3) What is the dopant concentration, N, or N.? (Please evaluate N. or N.)

At T=300K, the electron concentration of a semiconductor material isn, = 10" cm. The bandgap energy Eg=1.1eV, Nc = 2.8×10" cm³ , and N, =1.0×10" cm³. (1) Determine the hole concentration P.. Is this n-type or p-type semiconductor? (2) Determine EF – E; (3) What is the dopant concentration, N, or N.? (Please evaluate N. or N.)

University Physics Volume 3

17th Edition

ISBN:9781938168185

Author:William Moebs, Jeff Sanny

Publisher:William Moebs, Jeff Sanny

Chapter9: Condensed Matter Physics

Section: Chapter Questions

Problem 56P: The measured density of a KCl crystal is 1.984 g/cm3. What is the equilibrium separation distance of...

See similar textbooks

Similar questions

The measured density of a CsCl crystal is 3.988 g/cm3. What is the equilibrium separate distance of Cs+ and Cl- ions?
An intrinsic Si semiconductor sample has a length of L=100 um, at 300 K the sample is optically excited resulting in 1×10- cm`excess electron-hole pairs, assuming the lifetime of electrons and holes is 1 us, under an applied voltage of 10 V, the change of sample resistance will be: OA. 3239 Ohms O B. 0.009000 Ohms OC. 9.000e-4 Ohms O D. 31.24 Ohms OE. 3.239e5 Ohms
Calculate the base current required to switch a resistive load of 8mA for an npn- transistor with B = 156. Lütfen birini seçin: a.113.21 pA b.84.97 µA c.66.67 µA d.96.38 pA e.51.28 µA
Consider spherical nanoparticles of copper with diameters of 10 and 100 nm. A) Calculate the total number of atoms in the particles,considering the lattice parameter of bulk Cu. B) Calculate the number of atoms at the grain boundaries for a typical grain boundary thickness of 1nm.
Operating point represents.…... A. Values of Vce and Iç when signal is applied B. The magnitude of signal C. Zero signal values of Vce and Ic D. None of the above C D В A CLEAD MY CHOICE
Semiconductor LED's have a slow response tiте аnd hencе a low frequency operation and low band width because: а. their produced photons are mainly due to the diffusion process of the injected carriers b. Their produced photons are due to injected electrons having a low drift velocity only in n-side of the junction С. Their produced photons are due to injected holes having a low drift velocity only in p-side of the junction d. Their produced photons are due to injected electrons and holes having a low drift velocity due to low biasing voltage.
: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 v. Determine the velocity of the electrons. Use p1350 cm/V.ses
Date 1 9. For intrinsic Ga As, the room temperature electrical Conductivity is 10-6 (12-m)-1, the electron and hole mobilities 0.85 and 0.04 m² /v-s· Compute the are intrinsic Carrier concentration. Page 1
What should be the bias polarities to be applied in the Emitter-Base junction and Collector-Base junction of an NPN transistor? !! 四
Clear my CHOICE A laser beam with a power of 200 mW and frequency v= 15 x 1014 Hz is incident on a Si photo-detector doped with Na = 1 x 1012 cm3 fully ionized with an absorption coefficient as = 1 x 10 cm1. At steady state and assuming the electrons and holes recombination life times are T = To = 1 ns. Based on that calculate the total concentration of holes (p) in the valence band. Select one: OA. P = 2.01e12 /cm^3 OB. P = 2.25e15 /cm^3 • C.P = 2.25e16 /cm^3 OD. P = 2.25e18 /cm^3 OE. P = 2.25e17 /cm^3 Clear my choice ol muantum efficiency (the radiative recombination efficiency) n
A silicon p-n junction consists of a p-type region containing 3x1016 cm-3 acceptors and an n- type region containing also 1017 cm-3 donors. a. Calculate the density of electrons and holes in both p-type and n-type regions under thermal equilibrium at room temperature. b. Calculate the built-in potential of the p-n junction? c. Calculate the width of the depletion layer under a reverse bias of 1.0 V. d. Based on c, calculate the junction capacitance. Note that the junction cross-session area is 1.2 mm2.
For faithful amplification by a transistor circuit, the value of VCE Should transistor for silicon А. Вe zero В. Ве 0.01V C. Not fall below 0.5 V D. Be abvove 1V D В А