A silicon wafer of diameter D 120 mm, and emissvity of 0.6 is cool in quiescent, ambient air and large surroundings for which Tair Tsur 35oC. What is the rate of cooling from the upper surface of the wafer? Properties of Air:k0.0373 W/m.Cv32.3910-6 m2 alpha 47.2106 m2s P0.686 B- 1/Tf - 0.0022 K-1. nitial tem Select one: O a. 344 W O b. 53 W O . 627 W O d. 86 W

Principles of Heat Transfer (Activate Learning with these NEW titles from Engineering!)
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Chapter9: Heat Transfer With Phase Change
Section: Chapter Questions
Problem 9.39P
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A silicon wafer of diameter D -120 mm, and emissivity of 0.6 is at an initial temperature of Ti- 325oC and is allowed to
cool in quiescent, ambient air and large surroundings for which Tair Tsur 35oC. What is the rate of cooling from the
upper surface of the wafer? Properties of Air: k0.0373 W/m.C.v- 32.3910-6 m2 alpha 47.2106 m2/s Pr 0.686.
B= 1/Tf = 0.0022 K-1.
Select one:
O a. 344 W
O b. 53 W
O . 627 W
O d. 86 W
Transcribed Image Text:A silicon wafer of diameter D -120 mm, and emissivity of 0.6 is at an initial temperature of Ti- 325oC and is allowed to cool in quiescent, ambient air and large surroundings for which Tair Tsur 35oC. What is the rate of cooling from the upper surface of the wafer? Properties of Air: k0.0373 W/m.C.v- 32.3910-6 m2 alpha 47.2106 m2/s Pr 0.686. B= 1/Tf = 0.0022 K-1. Select one: O a. 344 W O b. 53 W O . 627 W O d. 86 W
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