4. Find the length of a piece of nichrome wire 0.102 cm in diameter and has a resistance of 25 Q. Specific resistance of nichrome wire is 109 µN-cm.
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Find the length of a piece of nichrome wire 0.102 cm in diameter and has a
resistance of 25 Ω. Specific resistance of nichrome wire is 109 μΩ-cm.
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- 1. Nichrome ribbon resistor elements each has a resistance of 1 ohm. The element is made from sheet of nichrome alloy, 0.0025 cm thick. If the width of the ribbon is 0.3 cm, what length is required per element in cm? Assume specific resistance of nichrome alloy to be 109 micro ohm-cm.The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 × 10-4 s/m. Find the barrier potential at 300°K, if the µn = 2.4µp?k) An n-type silicon of 1-micron length and cross-sectional area of 100 μm² has a voltage of 2 V applied across it. If n₁ = 1 × 10¹⁰ cm-³, N₁ = 1 × 101¹6 cm-³ and µm = 1500 cm² V-¹s-1, find the following: Electron drift velocity. Time it takes for an electron to cross the 1 um length. Drift current density due to electrons. Drift current due to electrons.
- A two wires, one of Copper and the other of Nickel, if the resistance of the first is (12.7 Q), and the second is (11.6 0) at room temperature, at what temperature are their resistances equal? Note that the temperature coefficient of resistivity of Copper is (0.0039 C-1), and for Nickel it is equal to (0.006 C1).Q2) A silicon crystal having a cross-sectional area of 0.001cm2 and a length of 10 cm is connected at it s ends with 10v battery at temperature 300°K, when the current is 100mA. Find the resistivity and the conductivity?Silicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity? Find the electron and hole concentrations at 300 K. Is this material n-type or p-type? Find the electron and hole mobilities. What is the resistivity of the material?
- B/ The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 x 10-4 s/m. Find the barrier potential at 300°K, if the Hn = 2.4µp?Consider an extrinsic semiconductor. Given: /n = 6550 cm² /V sec Mp = 400 cm²/V sec ni = 5.6 x 1012/cm³ Find out the hole and electron concentration in the semiconductor when conductivity is minimum (in cm-³).What is the conductivity of AWG #32 tungsten wire with a resistance of 0.0172 Q/cm? The diameter of AWG #32 is 8.0 mils. Ans. 17.9 MS/m 6.34.
- You apply a voltage of 5 V across a uniformly doped 1 mm long p-type semiconductor bar and measure a current density of 1 A/cm2. What is the conductivity of the semiconductor? 0.02 S/cm 5.0 Ω-cm O 0.5 Q-cm O 0.5 S/cmSketch the atomic structure of copper and discuss why it is a good conductor and how its struc-ture is different from that of germanium, silicon, and gallium arsenide.A picce of p-type silicon with a cross section of I mm x 1 mm and length of 10 mm has i resistivity of 10 0-m at 27°C. Ohmic contacts are fabricated on the surfaces at either end of the longest dimensions of the bar and a DC voltage of 10V is applied, Assuming a hole mobility uh -0.03 m/V-s, calculate: The impurity concentration The velocity of the carriers through the bar The time taken for carriers to transverse across the bar The magnitude of the current in bar iv)