Q:- A current of (2 HA) passing through an intrinsic silicon bar has (3 mm) length and (50 x 100 um?) cross section area. The resistivity of the bar is (2.3 x 10 0/cm) at (300 K) find the voltage across the bar?

Q:- A current of (2 HA) passing through an intrinsic silicon bar has (3 mm) length and (50 x 100 um?) cross section area. The resistivity of the bar is (2.3 x 10 0/cm) at (300 K) find the voltage across the bar?

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

See similar textbooks

Related questions

Q: A phosphorus- doped silicon wafer for an electrical component has an electrical resistivity of 8.33…

Q: A semiconductor material has electron and hole mobilities ua and µ, respectively. When the…

A: We need to find out conductivity of given semiconductor

Q: is given by for 0<x<L The electron mobility is The electron concentration in a semiconductor n(x)…

Q: A slice of intrinsic silicon bar is 3 mm long and has a rectangular cross-section 50 µm x 10 µm. At…

A: Given values are - L=3mm=3×10-3mA=50μm×10μmI=2μAρ=2.30×105ohm-cm=2.30×103ohm-m

Q: a. What is the Staebler-Wornski effect in an amorphous silicon (a-Si) solar cells and how can it be…

A: Solution (a) - Staebler-Wornski effect - The light-induced metastable changes in the…

Q: Consider a bar of silicon in which a hole concentration profile described by P(x) =P,e, is…

A: The conductivity of semiconductor is lies in between conductor and insulator. The band gap of…

Q: Q6: Determine the probability f (E) for electrons occupied in conduction band at 300°K, considering…

Q: (A) compute the concentration of electrons and hole in an intrinsic sample of Si at room temperature…

A: For the Intrinsic sample of Si at room temperature At me = 0.7 mo and mh = mo Concentration of…

Q: We inject electrons into a p-type semiconductor 5 microns long such that the concentration varies…

A: Diffusion current is the movement of holes and electrons from high-concentration locations to…

Q: 13. A resist or of pure Silicon with a resist an ce of 2500 N at 20 °C, if the resi stance of this…

A: The expression for the energy gap between -40oC and 200oC is given by: EG=1.20585-2.745×10-4T The…

Q: 2. The dc block charge diagram of an ideal MOS capacitor is shown. (a) Is the semiconductor…

Q: Consider a Silicon crystal at 300 K doped with 5x1016 As atoms/cm. (ni 1.5x1010 /cm³) a) What is the…

A: Given ni = 1.5 × 1010 / cm 3 ND = 5 × 1016 /cm3

Q: H.W5: If the ratio of mopility of electrons to mopility of holes is 3:1 and the condicutivity of…

A: Here i have derived the answer. Ni=intrinsic carrier concentration. P=Na= acceptor concentration.

Q: 9.A semiconducting crystal with 12 mm long, 5 mm wide and 1 mm thick has a magnetic density of 0.5…

A: 9. From the above question data is as follows: To find Hall coefficient:VH=37 μV=37×10-6 Vt=1…

Q: Drive the equation given below for the hole concentration?

A: Equation of Hole concentration is derived as shown below

Q: A current density of 5000 A/cm2 exists in a 0.02 Ω · cm n-type silicon sample. What is the electric…

A: The current density is 5000 A/cm2 The resistivity of the n-type sample is 0.02 ohm-cm. Current…

Q: PROBLEM 6 Consider the two-dimensional representation of the semiconductor GaAs shown below: : Ga;…

A: The GaAs semiconductor is made up of Gallium and arsenic. Gallium is an electron-deficient atom as…

Q: At 300K, the electron density in a silicon sample has linear distribution and decreases from 106 cm…

A: Given at 300 K. the electron density in a silicon sample has linear distribution n(x)=1016 cm-3 at…

Q: QUESTION Consider a uniformly doped silicon p'-n junction with acceptor concentration of 7x10“ cm',…

A: Given data is- In the N- region Na1=7×1014 cm-3Na1=7×108 m3Na2=15×10-6 m In P- region Nd=5×10-6 m…

Q: A silicon sample is uniformly dopedl ptype NA= 10%cm². At T=0 K, what are the equili with vilibr…

A: Electron and hole concentration at T=0K is determined as shown below

Q: ) If in pure silicon crystal there are 500000 holes, then how many free electrons are there in the…

A: The solution is given below

Q: A Silicon bar having a length of 4μm, doped with n-type at 10"/cm", calculate the current density…

A: Given,Length, l=4μmConcentrationof n-type material, n=1017/cm3Applied voltage, V=2VCross-sectional…

Q: The maximum drift velocity of electrons in silicon is 107 cm/s. If the silicon has a charge density…

A: Given data, The value of maximum drift velocity is 107 cm/s. The value charge density is 0.4 C/cm3.…

Q: Estimate the amount of free electrons and holes in a N-doped Silicon wafer a) at room temperature…

A: We will find out the the intrinsic concentration then by mass action law we will find out the hole…

Q: Consider a uniformly doped silicon p'-n junction with acceptor concentration of 7x10 cm, 15x10 m of…

Q: What is the benefit of resistance(Charging Resistor)(10 MQ) in an experiment A.C. Breakdown Test of…

A: A spark gap has two conducting electrodes separated by a gap usually filled with gas or air. This…

Q: 4. Use this information to answer Question 4-6: Below is the capacitance-voltage curve measured for…

Q: Consider a semiconductor material of silicon. At 400 K, the electron concentration in the conduction…

Q: what the hole current density in silicon if the hole drift velocity is 106 cm/s and the density of…

A: Here hole current density and total current we need to find out. We have derived the value of these…

Q: A uniform bar of n-type silicon of 2 um length has a voltage of 1.75V applied across it. If No - 1.0…

A: Since you have posted a question with multiple sub-parts, we will solve first three sub-parts for…

Q: A- An n - type silicon bar 0.1 cm long and 100 um? in cross - sectional area has a majority carrier…

Q: Find the position of the Fermi energy level relative to the intrinsic level of the Si semiconductor…

A: We need to find out position of Fermi level relative to intrinsic Fermi level .

Q: The intrinsic carrier density at 300 K is 1.5x10^10/cm^3 in silicon. For n-type silicon doped to…

A: The given semiconductor is n-type, the majority carrier will be the electrons. The electron density…

Q: When a p-and n-type semiconductor are joined at an interface their Fermi energies equilibriate. If…

A: When a p-and n-type semiconductor are joined at an interface their Fermi energies equilibriate. If…

Q: Consider a bar of silicon in which a hole concentration profile described by p(x) =Poe is…

A: The conductivity of semiconductor is lies in between conductor and insulator. The band gap of…

Q: b) Calculate the drift velocity of electrons in silicon at room temperature and when the magnitude…

A: In this question we will find drift velocity of electrons...

Q: Q2:- A semiconductor material has electron and hole mobilities µa and µp respectively. When the…

A: We need to find out conductivity .

Q: A picce of p-type silicon with a cross section of 1 mm x 1 mm and length of 10 mm has a resistivity…

A: We need to tell about different parameters of extrinsic p type semiconductor.

Q: For intrinsic semiconductors, the concentration of intrinsic carriers ni depends on the temperature…

Q: Based on the charge neutrality equations, a) Obtain a mathematical expression for the density of…

Q: Consider a state in a metal conduction band that is 0.1eV above the Fermi energy. The metal is at a…

A: Thermal equivalent temperature Vt Vt = kt/q . kt = T /11600 Given T = 1178 K KT = .10155…

Q: Consider a Silicon crystal at 300 K doped with 5x1016 As atoms/cm³. (n¡ = 1.5x10º /cm°) a) What is…

Q: 5) Germanium doped with 1024 m³ Al atoms is a semi-conductor at room temperature and each Al atom…

A: a) aluminium is a trivalent impurities.so when Ge doped with aluminium makes the semiconductor is a…

Q: Consider a bar of silicon in which a hole concentration profile described by p(x) = Poe is…

Q: Where is the Fermi-level of a boron doped Si semiconductor at 77 K, 300 K, and 600 K at full…

A: The given data is T1=77 k, T2=300 k, T3=600 k. Here the Ef is fermi energy and the Ei is intrinsic…

Q: Q2:- A semiconductor material has electron and hole mobilities un and µp respectively. When the…

A: We need to find out conductivity and electron concentration .

Q: Consider germanium Ge and GaAs material. Which material has lower intrinsic carrier concentration ni…

Question

Q:- A current of (2 HA) passing through an intrinsic silicon bar has (3 mm) length and (50 x
100 um) cross section area. The resistivity of the bar is (2.3 x 105 0/cm) at (300°K)
find the voltage across the bar?

Expert Solution

This question has been solved!

Explore an expertly crafted, step-by-step solution for a thorough understanding of key concepts.

SEE SOLUTION Check out a sample Q&A here

Step 1

VIEW

Step 2

VIEW

Step by step

Solved in 2 steps

SEE SOLUTION Check out a sample Q&A here

Similar questions

The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where R1 and R2 are the resistances at temperatures T1 and T2, respectively, and is known as the temperature coefficient of resistance. If a copper wire has a resistance of 55 at 20C, find the maximum permissible operating temperature of the wire if its resistance is to increase by at most 20. Take the temperature coefficient at 20C to be =0.00382.
A silicon semiconductor has a shape of a rectangular bar with a cross sectional area of 1x10-6cm2 and a lenght of 0.1 cm. How do i calculate the current through the semiconductor if a basis of 5 volts is applied across its length?
a) Explain the band structure of an electrical conductor (metal), a semiconductor, and an insulator at 0 K by showing the valence and conduction bands and fermi energy levels. Explain how the electrical conduction takes place in these three types of materials. Give an example for each type of material. b)Explain what n and p-type semiconductors are using their band structures.
Consider an extrinsic semiconductor. Given: /n = 6550 cm² /V sec Mp = 400 cm²/V sec ni = 5.6 x 1012/cm³ Find out the hole and electron concentration in the semiconductor when conductivity is minimum (in cm-³).
Q3: A silicon is doped with 1017 boron atoms/cm-3. What is the electron concentration (n) at 300 k?. What is the resistivity? H, = 2505 nį = 1.5 x 1010cm-3 cm-2 and V.S (Ans. 2.25 x 103 cm-3, 0.252.cm).
Each of three insulators forming a string has self-capacitance of "C" farad. The shunt capacitance of each cap of insulator is 0-25 C to earth and 0-15 C to line. Calculate the voltage distribution across each insulator as a pecentage of line voltage to earth and the string efficiency.
(1-7) Find the concentration of holes and electrons in a p-type Germanium at 300 k, if the conductivity is 100 per ohm per cm. Also find these values of N- type Silicon, if the conductivity of 0.1 per ohm per cm .given for Germanium n-2.5×1013/cm³ Hn=3800 cm2/v-s, up=1800 cm?/v-s, and for Silicon n=1.5x101%cm', Hn=1300 cm²/v-s, µp=500 cm²/v-s
6) You work as an engineer in a company and you have been given the assignment of measuring the electrical conductivity and the band gap (Eg) of a new intrinsic semiconductor material at 20 and 100 °C. You cut this material in the form of a rectangular prism with a length of 30 cm, a width of 1 cm and a thickness of 2 cm, and you applied a potential difference of 1 V by placing electrodes on the faces shown in the figure. In this case, you measure a current of 0.8A at 20 °C and 12A at 100 °C. According to this information a) calculate the electrical conductivity of the material at 20 and 100 °C and b) the band gap of this material. 30 ст 2 ст 1 cm
The applied electric field in p-type silicon is E=10V/cm. The semiconductor conductivity is 1.5(Ω-cm)-1and cross-sectional area is 10-5cm2. Determine the driftcurrent. (b) A drift current density of 120A/cm2is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration.
Q2) A silicon crystal having a cross-sectional area of 0.001cm2 and a length of 10 cm is connected at it s ends with 10v battery at temperature 300°K, when the current is 100mA. Find the resistivity and the conductivity?
Figure Q4 shows the silicon wafer. This silicon has been added with the two elements as listed in Table Q3. Identify the majority charge carrier in each extrinsic silicon wafer and justify your answer with illustrations.
Q:- A current of (2 µA) passing through an intrinsic silicon bar has (3 mm) length and (50 x 100 um?) cross section area. The resistivity of the bar is (2.3 x 105 n/em) at (300 K) find the voltage across the bar?