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- Operating point represents.…... A. Values of Vce and Iç when signal is applied B. The magnitude of signal C. Zero signal values of Vce and Ic D. None of the above C D В A CLEAD MY CHOICE.9:0A Asiacell Q1.jpg Find the current through the diode in the circuit shown. Assume the diode to be ideal. 50 Ω A R1 V = 10 V 50 R2 B AA silicon p-n junction consists of a p-type region containing 3x1016 cm-3 acceptors and an n- type region containing also 1017 cm-3 donors. a. Calculate the density of electrons and holes in both p-type and n-type regions under thermal equilibrium at room temperature. b. Calculate the built-in potential of the p-n junction? c. Calculate the width of the depletion layer under a reverse bias of 1.0 V. d. Based on c, calculate the junction capacitance. Note that the junction cross-session area is 1.2 mm2.
- chapter 4.PNG → Problems Ql: A bar of intrinsic silicon having a cross section area of 3x104 m² has an n=1.5x1016m3. If µ=0.14 m2/V.s and u,-0.05 m2/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm) Q2: Calculate the thermal equilibrium electron and hole concentration in silicon at T=300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy. Eg= 1.12 eV. The values of Ne and N, are 2.8x1025/m³ and 1.04x1025/m', respectively. (Ans: n=5.73x102²/m², p-8.43x10%m³) Q3: Find the intrinsic carrier concentration in silicon at (a) T=200K, (b) T=400K. The values of Ne and N, are 2.8x1025/m and 1.04x1025/m', respectively. (Ans: (a) 7.68x1010/m², (b) 2.38×1018/m³) Q4: Determine the position of the intrinsic Fermi level with respect to the center of the bandgap in GaAs at T=300K. mn=0.067 mo, m,=0.48 mo (Ans: -38.2meV) II*42. a. Determine VL, IL, Iz, and Ir for the network of Fig. 2.186 if R1 = 180 N. b. Repeat part (a) if R1 = 470 N. c. Determine the value of R1 that will establish maximum power conditions for the Zener diode. d. Determine the minimum value of R1 to ensure that the Zener diode is in the “on" state. Rs 220 2 IR Vz = 10 V RL VL 20 V Pz, = 400 mW Zmax FIG. 2.186 Problem 42.GaAs is utilized to manufacture infrared light-emitting diodes (LEDs). The band gap is 1.42 eV, and the effective masses of electrons and holes are 0.067 and 0.45 of the free-electron mass, respectively.a. Calculate the intrinsic electron and hole concentration of pure GaAs at room temperature.b. What is the carrier concentration intrinsic?c. Where is the Fermi energy level located?
- True or false? If false, correct the statement: a. In an p+-n- junction diode (NA >> ND), nearly all depletion is in the n-type region, and the peak electric field at the junction is almost independent of NA. b. The forward current of a p-n junction diode is dominated by the diffusion and recombination of majority carriers. c. In a Schottky barrier diode, there are two types of capacitances, i.e., the depletion capacitance and diffusion capacitance. d. In a Schottky contact, the energy barrier seen by electrons in the metal is always the Schottky barrier height, regardless of the applied bias across the metal and semiconductor. e. Usually the reverse current of a p-n junction diode is more sensitive to temperature as compared to that of a Schottky barrier diode. f. In a MOS structure with p-type semiconductor, if the semiconductor work function is much smaller than the metal work function, the MOS structure will produce an inversion layer after reaching the thermal equilibrium.…A. Define the drift current in a semiconductor and give the mathematical expressions about both the current density of the electron drift current and the current density of the hole drift current. Define the diffusion current in a semiconductor and give the mathematical expressions about both the current density of the hole diffusion current and the current density of the electron diffusion current. B. P-N junction is given. Please: i) Draw the cross-section of this p-n junction and show the depletion region and the corresponding electrical field for an applied external voltage V # 0 volts if the positive terminal of the voltage source is connected to the n-side of the p-n junction and the negative terminal of the voltage source is connected to the p-side of this p-n junction. ii) Draw the cross-section of this p-n junction and show the depletion region and the corresponding electrical field for an applied external voltage V # 0 volts if the negative terminal of the voltage source is…The maximum wavelength of light that a certain silicon photocell can detect 1.11μm1.11μm.a. What is the energy gap (in electron volts) between the valence and conduction bands for this photocell?b. Explain why pure silicon is opaque.
- 2.a Why is silicon widely used as a semi conductive material over Germanium? 2.bFind the power delivered to an element at t = 30s if the current entering its positive terminals is I=cos60πt A and the voltage is v = Qi. 2.c The total charge entering a terminal is given by Q=10tcos4πt mC . Calculate the current at t = 0.5 sec.Copper has mass density of 8.95 g/cm^2 and n electrical resistivity of 1.55 ×10^-8 ohm -m at room temperature. Assuming the effective mass is "mo " ,calcualte a, the concentration of the conduction electron . b,mean free time . c ,the Fermi energy.A transistor is connected in common base mode and amplification factor is 0.98 and leakage current is 12µA. Find the base current for an emitter current of 2mA. A. 3.972 mA В. 0.028 mА C. 1.972 mA D. 1.96 mA A C D В