1.Silicon is a single-crystal material with no other type of atoms within the material. Given the coefficient of Si material, bandgap energy and Boltzmann constant are 5.23 x 1015 cm-³K-3/2, 1.1 eV and 86 × 10-6 eV/K respectively. i. Calculate the intrinsic carrier concentration of silicon at 350 K. ii. The silicon is doped with 5.23 x 1016 cm-³ of arsenic atom. Calculate the electron and hole concentration of the doped silicon at 350 K. Explain the importance of the doping process in semiconductor.

1.Silicon is a single-crystal material with no other type of atoms within the material. Given the coefficient of Si material, bandgap energy and Boltzmann constant are 5.23 x 1015 cm-³K-3/2, 1.1 eV and 86 × 10-6 eV/K respectively. i. Calculate the intrinsic carrier concentration of silicon at 350 K. ii. The silicon is doped with 5.23 x 1016 cm-³ of arsenic atom. Calculate the electron and hole concentration of the doped silicon at 350 K. Explain the importance of the doping process in semiconductor.

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

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