Calculate the drift current density in (mA/m²) for the silicon at room temperature. If the intrinsic carrier concentration of (2x1016electron/m) with the doping concentration of (3x1016atoms/m³) of the phosphorus and (2x1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s) and the mobility for the holes (0.05m2/V.s) and the electric field (100V/m). 85.75 O 72.72 O 62.77 82.77 80.77

Delmar's Standard Textbook Of Electricity
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ISBN:9781337900348
Author:Stephen L. Herman
Publisher:Stephen L. Herman
Chapter1: Atomic Structure
Section: Chapter Questions
Problem 6RQ: How many valence electrons are generally contained in materials used for insulators?
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Calculate the drift current density in (mA/m2) for the silicon at room
temperature. If the intrinsic carrier concentration of (2x1016electron/m³) with
the doping concentration of (3x1016atoms/m³) of the phosphorus and
(2x1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s)
and thé mobility for the holes (0.05m2/V.s) and the electric field (100V/m).
O 85.75
O 72.72
O 62.77
82.77
O 80.77
Transcribed Image Text:Calculate the drift current density in (mA/m2) for the silicon at room temperature. If the intrinsic carrier concentration of (2x1016electron/m³) with the doping concentration of (3x1016atoms/m³) of the phosphorus and (2x1016atoms/m³) of Boron. Given the mobility for the electrons (0.15m2/V.s) and thé mobility for the holes (0.05m2/V.s) and the electric field (100V/m). O 85.75 O 72.72 O 62.77 82.77 O 80.77
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