Essential University Physics: Volume 2 (3rd Edition)
Essential University Physics: Volume 2 (3rd Edition)
3rd Edition
ISBN: 9780321976420
Author: Richard Wolfson
Publisher: PEARSON
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Chapter 37, Problem 70PP
To determine

The effect on the fraction of solar energy absorbed and amount of absorbed energy lost as heat when a PV cell is made from a semiconductor whose energy gap is lower than silicon.

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An n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.
The best multi-junction solar cells have an efficiency of about 40% for converting light energy from the sun into electricity. Estimate the size of a photocell that would be required to supply all the annual energy used by the US. (The average energy density from sun striking the surface of the earth is ~ 1.0 kW/m2 and assume that the cell is illuminated for 8 hours per day) The US consumes 100 quadrillion btu of energy.
In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…

Chapter 37 Solutions

Essential University Physics: Volume 2 (3rd Edition)

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