The zero−bias capacitance of a silicon pn junction diode is C j o = 0.02 pF and the built−in potential is V b i = 0.80 V . The diode is reverse biased through a 47 − k Ω resistor and a voltage source. (a) For t < 0 , the applied voltage is 5 V and, at t = 0 , the applied voltage drops to zero volts. Estimate the time it takes for the diode voltage to change from 5 V to 1.5 V. (As an approximation, use the average diode capacitance between the two voltage levels.) (b) Repeat part (a) for an input voltage change from 0 V to 5 V and a diode voltage change from 0 V to 3.5 V. (Use the average diode capacitance between these two voltage levels.)
The zero−bias capacitance of a silicon pn junction diode is C j o = 0.02 pF and the built−in potential is V b i = 0.80 V . The diode is reverse biased through a 47 − k Ω resistor and a voltage source. (a) For t < 0 , the applied voltage is 5 V and, at t = 0 , the applied voltage drops to zero volts. Estimate the time it takes for the diode voltage to change from 5 V to 1.5 V. (As an approximation, use the average diode capacitance between the two voltage levels.) (b) Repeat part (a) for an input voltage change from 0 V to 5 V and a diode voltage change from 0 V to 3.5 V. (Use the average diode capacitance between these two voltage levels.)
Solution Summary: The author explains the value of the zero capacitance and the built-in potential of a pn junction diode.
The zero−bias capacitance of a silicon pn junction diode is
C
j
o
=
0.02
pF
and the built−in potential is
V
b
i
=
0.80
V
. The diode is reverse biased through a
47
−
k
Ω
resistor and a voltage source. (a) For
t
<
0
, the applied voltage is 5 V and, at
t
=
0
, the applied voltage drops to zero volts. Estimate the time it takes for the diode voltage to change from 5 V to 1.5 V. (As an approximation, use the average diode capacitance between the two voltage levels.) (b) Repeat part (a) for an input voltage change from 0 V to 5 V and a diode voltage change from 0 V to 3.5 V. (Use the average diode capacitance between these two voltage levels.)
models
Diodes-Piece-wise
Problem #1
In the circuit shown below, the voltage source Vin is given by the sketch. Assuming an ideal
diode, sketch the waveform resulting at Vout. Use the axis at the bottom to help you sketch the
voltage output.
10Ω
Vin
+7V
-7V +
Vin
Vin
AA
1
3 4 5
1
2
D
3
5 V
4
+
Vout
5
6
➡t (ms)
+++t (ms)
6
A forward voltage of 1.75V shifts to the left at a rate 2.65mV per degree
centigrade in temperature from 25°C to -35°C. What is the new forward voltage
of the diode? *
Your answer
Find the reverse saturation current of a Silicon diode that displays a forward
current of 20 mA at 0.75 V when the Thermal Voltage is 0.038 V. ( Express your
answer in 3 decimal places. Your answer can be in p (pico) or n (nano) unit. e.g.
only 5 nV. Upload your solution in the file upload question but type Final Answer
here. *
Your answer
Question 1:
In the circuit shown below, the output (Vo = 10V Max.) Unipolar. The frequency of Primary is 60 Hz. The
diodes are Silicon with VD = 0.7V.
a. Sketch the output without a Capacitor.
b. Determine Voc without a Capacitor.
c. Sketch Vs (at the Secondary).
d. Determine Voc with a Capacitor of 10 uF across RL.
e. Determine the RMS Value of Vp (at the Primary).
f. PIV (Peak Inverse Voltage).
10:1
Output
C.
22 k1
All diodes are IN4001.
|
00000
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