1. Design the circuit of Fig. 1 to establish a drain current of 0.1mA and a drain voltage of 0.3V. The MOSFET has V=0.5V, μCx-400uA/V², L=0.4μm, W=5μm. Specify the required values for Rs and RD. +1 V Ro Rs Fig.1 IV

Determine the region of operation for a room-temperature silicon pnp transistor that has β=100 if: a. VCE=−5 V and VBE = b. IC=10 mA and IB = 1 mA; c. IB=0.05 mA and VCE=−5 V.

Consider the n-channel MOSFET with tox = 9 nm, µn = 500 cm2/V-s, V = 0.7V, and W/L = 10. Find the drain current and determine the mode of operation in the following cases: a) VGs = 5V and Vps = 1V b) VGs = VDs = 5V.

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The destructive breakdown of silicon dioxide occurs with an electric field of about 10 million V/cm. Consider an integrated MOSFET with a 4.5-nm thick oxide. 1. Determine the gate-to-source bias voltage that will result in destructive breakdown. 2. Determine the associated charge in Coulombs for 018 mm x 2 mm gate. 3. Determine the associated number of electrons.

The DC load line and point Q of the circuit in figure (a) are shown in figure (b).For the BJT, silicon, β = 120. Find the values of RE, R1, and R2 such that the circuit has stable polarization.

3. Consider an n-channel MOSFET Cox = with tox = 6 nm, µn = 4605 Ven = 0.5V, and W/L=10. Be cautious with the units. cm² V.S tox and ox= 3.45 × 10-¹¹F/m Find the drain current in the following cases: a) VGs = 2.5V and vps = 1V 2.0V b) VGS = and vps 2.0V and vps = 1.5V c) VGS = 2.5V and vps = 0.2V

R₂ 18 V 3 Rc = 2 k RE ic (mA) 7.2 4.8 0 6 Q Point (b) 18 VCE (V) Problem 3 The DC load line and point Q of the circuit in figure (a) are shown in figure (b). For the BJT, made of silicon, B = 120. Find the values of RE, R1, and R2 so that the circuit has stable bias. (Use and indicate your stability criterion)

The transistor in the circuit shown has VBEact = 0.7 V and ß = 100. Assume that VCEsat = 0 V and VBIAS = 1 V. (SOLVE ONLY D) a. What is the smallest value of vi that will not cause the transistor to go into cut-off. Hint: This should be a negative voltage. b. What is the largest value of vi that will not cause the transistor to go into saturation. Hint: This will be a positive voltage. c. If I want the magnitude of the answers in a and b to be the same, what should I adjust the value of VBIAS to? d. By what factor are changes in Vi amplified at Vo V BIAS HIHI 10K +10 V 1K %₂

Assume that we need to drive an LED that requires ILED = 10 mA. All othervalues are unchanged. Find the range of collectorresistance RC values that will permit the transistor tosupply the required current.