1. Design the circuit of Fig. 1 to establish a drain current of 0.1mA and a drain voltage of 0.3V. The MOSFET has V₁=0.5V, unCox=400uA/V², L=0.4um, W=5um. Specify the required values for Rs and RD.

Part of the data sheet of the 2N5457 model JFET transistor is provided in your question paper. Answer the following using this data sheet i. Find the Ip (drain current) value for VGs = 0 V. (VGs (off) = - 3.5V) ii. Find the Ip (drain current) value for VGs = -2 V. (VGs (ofM= - 3.5V) iii. Calculate the values of Vps and VGs in the circuit given in the figure. Use the minimum values given in the data sheet. VDD +12 V Rp 10 kf 2N5457 Rs 5.6 kf

the transistor in the circuit above has gm=1.06mS and ro=16Kohm. Given the following condition: R1=770Kohm, R2=890Kohm, RD=5.4Kohm, R3=20Kohm, R6=7.1Kohm, Rsig=1.1Kohm. determine the intrinsic drain resistance, Rid, in Kohm

Assuming VTh=0.4 V for NMOS transistors and VTh= -0.4 V for PMOS transistors, the MOSFET transistor in the following circuit is operating in: ܟܨܘܝ 24 1 V 0.2 V- M₁ -0.7 V Select one: O a. Subthreshold conduction b. Cutoff region Triode region O C. O d. Saturation region Oe. All of these 9 من ١٤

3. Consider an n-channel MOSFET Cox = with tox = 6 nm, µn = 4605 Ven = 0.5V, and W/L=10. Be cautious with the units. cm² V.S tox and ox= 3.45 × 10-¹¹F/m Find the drain current in the following cases: a) VGs = 2.5V and vps = 1V 2.0V b) VGS = and vps 2.0V and vps = 1.5V c) VGS = 2.5V and vps = 0.2V

The transistor in the circuit shown has VBEact = 0.7 V and ß = 100. Assume that VCEsat = 0 V and VBIAS = 1 V. (SOLVE ONLY D) a. What is the smallest value of vi that will not cause the transistor to go into cut-off. Hint: This should be a negative voltage. b. What is the largest value of vi that will not cause the transistor to go into saturation. Hint: This will be a positive voltage. c. If I want the magnitude of the answers in a and b to be the same, what should I adjust the value of VBIAS to? d. By what factor are changes in Vi amplified at Vo V BIAS HIHI 10K +10 V 1K %₂

A JFET produces gate current of 1.5nA when gate is reverse biased with 6V. Calculate the value of resistance between gate and source. a. 4.5 GQ b. 7.5 GQ C. 4 GQ d. 0.25 GQ

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1. A SCR has a forward breakover voltage of 175V when a gate pulse of 2 mA is made to flow. Find the conduction angle if a sinusoidal voltage of 350 V peak is applied.

The output characteristics for a PMOS transistor. What are the values of Kp and VTP for this transistor? Is this an enhancement-modeor depletion-mode transistor? What is the value ofW/L for this device?