1. Design the circuit of Fig. 1 to establish a drain current of 0.1mA and a drain voltage of 0.3V. The MOSFET has V₁=0.5V, unCox=400uA/V², L=0.4um, W=5um. Specify the required values for Rs and RD.

the transistor in the circuit above has gm=1.06mS and ro=16Kohm. Given the following condition: R1=770Kohm, R2=890Kohm, RD=5.4Kohm, R3=20Kohm, R6=7.1Kohm, Rsig=1.1Kohm. determine the intrinsic drain resistance, Rid, in Kohm

Assuming VTh=0.4 V for NMOS transistors and VTh= -0.4 V for PMOS transistors, the MOSFET transistor in the following circuit is operating in: ܟܨܘܝ 24 1 V 0.2 V- M₁ -0.7 V Select one: O a. Subthreshold conduction b. Cutoff region Triode region O C. O d. Saturation region Oe. All of these 9 من ١٤

3. Consider an n-channel MOSFET Cox = with tox = 6 nm, µn = 4605 Ven = 0.5V, and W/L=10. Be cautious with the units. cm² V.S tox and ox= 3.45 × 10-¹¹F/m Find the drain current in the following cases: a) VGs = 2.5V and vps = 1V 2.0V b) VGS = and vps 2.0V and vps = 1.5V c) VGS = 2.5V and vps = 0.2V

The transistor in the circuit shown has VBEact = 0.7 V and ß = 100. Assume that VCEsat = 0 V and VBIAS = 1 V. (SOLVE ONLY D) a. What is the smallest value of vi that will not cause the transistor to go into cut-off. Hint: This should be a negative voltage. b. What is the largest value of vi that will not cause the transistor to go into saturation. Hint: This will be a positive voltage. c. If I want the magnitude of the answers in a and b to be the same, what should I adjust the value of VBIAS to? d. By what factor are changes in Vi amplified at Vo V BIAS HIHI 10K +10 V 1K %₂

A loaded zener regulator has a VZ of 11 V with IZ equal to 23 mA, with IZK equal to 0.25 mA, ZZ equal to 8 Ω and a PD (max) equal to 1 W. The value of the resistance R is equal to 32 Ω. Determine the values ​​of the output voltage with IZK and IZM. Get the value of the minimum load resistance that can be used to keep the zener diode regulating.

A JFET produces gate current of 1.5nA when gate is reverse biased with 6V. Calculate the value of resistance between gate and source. a. 4.5 GQ b. 7.5 GQ C. 4 GQ d. 0.25 GQ

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24. Set up a midpoint bias for a JFET with Ipss = 14 mA and VGs(ofm = -10 V. Use a 24 V dc source as the supply voltage. Show the circuit and resistor values. Indicate the values of Ip, VGs, and Vps-