1. Design the circuit of Fig. 1 to establish a drain current of 0.1mA and a drain voltage of 0.3V. The MOSFET has V₁=0.5V, unCox=400uA/V², L=0.4um, W=5um. Specify the required values for Rs and RD.

The drain current in a p-channel E-MOSFET with VGS(th) = -3V at V=0 is GS Select one: a. maximum b. 0 A c. Ip(on) d. lpss ARABIC

The transistor in the circuit shown has VBEact = 0.7 V and ß = 100. Assume that VCEsat = 0 V and VBIAS = 1 V. (SOLVE ONLY D) a. What is the smallest value of vi that will not cause the transistor to go into cut-off. Hint: This should be a negative voltage. b. What is the largest value of vi that will not cause the transistor to go into saturation. Hint: This will be a positive voltage. c. If I want the magnitude of the answers in a and b to be the same, what should I adjust the value of VBIAS to? d. By what factor are changes in Vi amplified at Vo V BIAS HIHI 10K +10 V 1K %₂

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1. A SCR has a forward breakover voltage of 175V when a gate pulse of 2 mA is made to flow. Find the conduction angle if a sinusoidal voltage of 350 V peak is applied.

24. Set up a midpoint bias for a JFET with Ipss = 14 mA and VGs(ofm = -10 V. Use a 24 V dc source as the supply voltage. Show the circuit and resistor values. Indicate the values of Ip, VGs, and Vps-

Assuming a JFET has an Ipss = 9 mA and VGs(off) = -8 V (maximum). Using these values, determine the drain current for VGS = -2 V in mA.

Assume that we need to drive an LED that requires ILED = 10 mA. All othervalues are unchanged. Find the range of collectorresistance RC values that will permit the transistor tosupply the required current.

For the circuit, take VTN=0.8V, the conduction parameter Kn=1 mA/V2 and A-0. Calculate the Gate- Source voltage VGS and drain-source voltage VDS. +6V Сс www R₁ = 85 k R₂ = 20 k -6V Prove that the answer is ⒸVGS=1.66V and VDS-5.34V Rp=8k Rs = 1 k

2. Given the problem: