You are creating a semiconduxtor (hetero structurre) with a depth of 0.29 eV. Suppose well width is 6.2 nm. Effective mass of GaAs is m = 0.067. Find the Energy (ground state) in eV
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You are creating a semiconduxtor (hetero structurre) with a depth of 0.29 eV. Suppose well width is 6.2 nm. Effective mass of GaAs is m = 0.067. Find the Energy (ground state) in eV.
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