y doping semiconductors, it is possible to create materials with specifically d lectromagnetic properties for waves propagating within them. The following 1-D plan t a frequency of 10THz propagates in a heavily n-doped silicon: Ē = E ejot = Ēejot ē jat-jyz - t this frequency and the doping level, the conductivity of the medium is o = 105 Sm ave loses 3 dB of intensity (power) over a length of 184 nm. Assume the permittivity edium is purely real. Find the amplitude attenuation constant, a . the relative permittivity of the medium, &,

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By doping semiconductors, it is possible to create materials with specifically designed
electromagnetic properties for waves propagating within them. The following 1-D plane wave
at a frequency of 10THz propagates in a heavily n-doped silicon:
Ē = Ẽ ejot = Ēejat e¯jyz
At this frequency and the doping level, the conductivity of the medium is o=105 Sm'. The
wave loses 3 dB of intensity (power) over a length of 184 nm. Assume the permittivity of the
medium is purely real. Find
a. the amplitude attenuation constant, a
b. the relative permittivity of the medium, &,
c. the wave velocity, v
Transcribed Image Text:By doping semiconductors, it is possible to create materials with specifically designed electromagnetic properties for waves propagating within them. The following 1-D plane wave at a frequency of 10THz propagates in a heavily n-doped silicon: Ē = Ẽ ejot = Ēejat e¯jyz At this frequency and the doping level, the conductivity of the medium is o=105 Sm'. The wave loses 3 dB of intensity (power) over a length of 184 nm. Assume the permittivity of the medium is purely real. Find a. the amplitude attenuation constant, a b. the relative permittivity of the medium, &, c. the wave velocity, v
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