When a forward bias voltage of 0.64 V was applied to an abrupt silicon pn-junction at 300 K, the hole diffusion current density measured Jp (x,) = 3.88 A/cm?. Assume = 1x1010 cm-3, D, = 25 cm?/s, D,= 10 cm?/s, T, = , = 5x10-7 s, and &= 11.7. (i) Starting from the expression for Jp, determine the dopant concentration at the n-side. (ii) What is the value of the minority carrier hole concentration at the edge of the depletion region? (iii) If the total diode current density measured J= 4.49 A/cm?, compute the value of electron diffusion current density L.(-r-)

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When a forward bias voltage of 0.64 V was applied to an abrupt silicon pn-junction
at 300 K, the hole diffusion current density measured J, (xn) = 3.88 A/cm?. Assume
n = 1x10!0 cm3, D, = 25 cm?/s, Dp= 10 cm /s, t= 7, = 5x10-7 s, and & = 11.7.
(i) Starting from the expression for Jp, determine the dopant concentration at the
n-side.
(ii) What is the value of the minority carrier hole concentration at the edge of the
depletion region?
(iii) If the total diode current density measured J= 4.49 A/cm?, compute the value
of electron diffusion current density J, (-xp).
Transcribed Image Text:When a forward bias voltage of 0.64 V was applied to an abrupt silicon pn-junction at 300 K, the hole diffusion current density measured J, (xn) = 3.88 A/cm?. Assume n = 1x10!0 cm3, D, = 25 cm?/s, Dp= 10 cm /s, t= 7, = 5x10-7 s, and & = 11.7. (i) Starting from the expression for Jp, determine the dopant concentration at the n-side. (ii) What is the value of the minority carrier hole concentration at the edge of the depletion region? (iii) If the total diode current density measured J= 4.49 A/cm?, compute the value of electron diffusion current density J, (-xp).
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