VTH = 1 V and λ = 0. Assume the signal at the gate of the transistor is the sum of the time varying component of VI and the DC bias VG provided by the resistor divider network. That is, VG = V₁ + VG. a. The gain of the amplifier can be obtained by getting the derivative of vo with respect to VG. Use the large signal model of the transistor to obtain an expression for the gain of the amplifier assuming the transistor is biased in saturation mode. b. Use this expression to determine the gain of the amplifier at its Q-point. Validate the assumption that the transistor is in saturation. VI 200 K ww HE 100 K www 9 V quint 5 K Vo

Introductory Circuit Analysis (13th Edition)
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ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
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The transistor in the amplifier circuit shown has kn = 0.5 mA/V²,
VTH = 1 V and λ = 0. Assume the signal at the gate of the
transistor is the sum of the time varying component of VI and
the DC bias VG provided by the resistor divider network. That
is, VG = V₁ + VG.
The gain of the amplifier can be obtained by getting
the derivative of vo with respect to VG. Use the large signal
model of the transistor to obtain an expression
for the gain of the amplifier assuming the transistor is
biased in saturation mode.
Use this expression to determine the gain of the amplifier
at its Q-point. Validate the assumption that
the transistor is in saturation.
01
200 K
100 K
M
VG
WHI
9 V
5 K
Vo
Transcribed Image Text:The transistor in the amplifier circuit shown has kn = 0.5 mA/V², VTH = 1 V and λ = 0. Assume the signal at the gate of the transistor is the sum of the time varying component of VI and the DC bias VG provided by the resistor divider network. That is, VG = V₁ + VG. The gain of the amplifier can be obtained by getting the derivative of vo with respect to VG. Use the large signal model of the transistor to obtain an expression for the gain of the amplifier assuming the transistor is biased in saturation mode. Use this expression to determine the gain of the amplifier at its Q-point. Validate the assumption that the transistor is in saturation. 01 200 K 100 K M VG WHI 9 V 5 K Vo
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