To test a spectrophotometer's accuracy, a prepared and analyzed. This solution has 350.0 nm. Several aliquots of the solution values. 0.638 0.640 0.639 0.640 0.639 0.638 e any significant difference between the e at a 99.9% confidence level? s because tcal>tcritical
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- a.Calculate the specific absorptivity if the absorbance, A is 0.209, the path length of solution, b, is a 1.00 cm and the concentration, c is 10ug/mL?What will be the absorbance if the path length of the original solution increased to 5.00cm? b.A solution thickness 2.00cm transmits 40% incident light.Calculate the concentration of the solution, given that a = 6000dm mol-lem-1,Problems Q1: Calculate the drift current density in silicon sample. If T=300 K, N=102/m*, Na=102/m’V, un=0.85m’/V.s, Up=0.04m/V.s, E=35 V/cm.. (Ans: 6.8×104A/m²).3) a) A wire sample (1 mm in diameter by 1 m in length) of an aluminum alloy (containing 1.2% Mn) is placed in an electrical circuit such as that shown in the figure below. A voltage drop of 432 mV is measured across the length of the wire as it carries a 10 A current. Calculate the electrical conductivity of this alloy - Length, I Area, A Sample geometry b) Copper has an electrical conductivity of 58.00 × 10° S/m and a free electron density of 104 x 10"m³. Calculate the drift velocity of these electrons under an electric field of 0.5 V/m.
- Copper has mass density of 8.95 g/cm^2 and n electrical resistivity of 1.55 ×10^-8 ohm -m at room temperature. Assuming the effective mass is "mo " ,calcualte a, the concentration of the conduction electron . b,mean free time . c ,the Fermi energy.Una barra esta empotrada en su extremo A, tiene una fuerza de 15 kN en el punto B y otra fuerza de 91 kN en el punto C. Determine la elongación o contracción en la barra AC, en mm, positivo para elongación y negativo para contracción. A = 0.0035 m² E = 200 GPa C A -5 m- 2 m BQ1. Calculate the drift current density in a gallium arsenide sample at T-300 K, with doping concentration N,-0, N-10/m', H-0.85m'/V.s, -0.04m²/V.s, E-10 Viem, n-2.2×10"/m. Q2.
- I have tried this one multiple times and got the following answers: 1.24E13, 1.24E14, 2.84E27, 5.67E26. I can't get this practice problem correct. Thank you for your help1- Consider the measurement of pressure in a gas through measurement of its temperature T and density P Let the uncertainties of T and p be oT and op where p is determined from the ideal gas P = pRT. Derive an expression of uncertainty (error) in P and determine 6P / P. Suppose the uncertainty in op is 1% and in OT is 2 ° at T = 27º. 2- A battery supplies a current I to a resistor R with a potential difference E, the percentage uncertainties in E, I and R are known to be identical should the power drawn from the battery W be calculated as E * I or 12 * R . Derive an expression of uncertainty in W.: A uniform piece of n-type of silicon that is lum long senses a voltage of 1 v. Determine the velocity of the electrons. Use p1350 cm/V.ses
- Q1: Calculate the drift current density in silicon sample. If T-300 K, Na-1021/m³, Na-1020/m³V, H-0.85m²/V.S, Mp=0.04m²/V.s, E=35 V/cm.. (Ans: 6.8×10 A/m²).chapter 4.PNG → Problems Ql: A bar of intrinsic silicon having a cross section area of 3x104 m² has an n=1.5x1016m3. If µ=0.14 m2/V.s and u,-0.05 m2/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm) Q2: Calculate the thermal equilibrium electron and hole concentration in silicon at T=300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy. Eg= 1.12 eV. The values of Ne and N, are 2.8x1025/m³ and 1.04x1025/m', respectively. (Ans: n=5.73x102²/m², p-8.43x10%m³) Q3: Find the intrinsic carrier concentration in silicon at (a) T=200K, (b) T=400K. The values of Ne and N, are 2.8x1025/m and 1.04x1025/m', respectively. (Ans: (a) 7.68x1010/m², (b) 2.38×1018/m³) Q4: Determine the position of the intrinsic Fermi level with respect to the center of the bandgap in GaAs at T=300K. mn=0.067 mo, m,=0.48 mo (Ans: -38.2meV) II3 A one cm sample of a hypothetical material with conductivity of 108 (Ohm-meter) 1 is formed into a 10 cm wire. The material contains 1042 atoms per cm. Calculate the electron drift velocity when the wire carries an electrical potential of 10 V.