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The zener diode can......... as long as it is in the breakdown region
a)
b)not conduct current
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- A p-type semiconductor joined to an n-type semiconductor ... Pick those that apply. Will not allow current to flow in either direction. Has electron current flowing from the n-type to the p-type material Allows positive current flow from the p-type to the n-type material Allows current to flow in only one direction, and blocks the flow in the other direction Makes a diodeFor the given circuit, the power across zener diode is ............ mW. 24 V- 1 kQ wwwww VIZ Vz= 10 V www R₁ = 5kQAsiacell docs.google.com/forms In the depletion region of a PN- junction diode, there is * a number of holes and electrons O a number of donors and acceptors O a number of free charge carriers many free charge carriers O a number of ionized donors and ассeptors The output voltage and the current (I) of the electronic circuit are * and . (Si diodes) I. R ww 500 2
- 2) Consider a two terminal semiconductor diode a) Calculate the thermal voltage of a diode at room temperature about 27°C. b) Calculate diode dynamic resistance in case of 13 mA diode current. (Boltzman's constant is 1.38x10-23 J/K, and magnitude of electron charge is 1,6X10-19 C)exist is for valence electrons to "leap" into the conduction band with the Enoiteou Question 5 pplication of sufficient energy, legving a hole, or vacancy, behind in the valence band: Valence electron leaping into conduction band Conduction band valence band With sufficient thermal energy, these electron-hole pairs will form spontaneously. Af room temperature, however, this activity is slight. we may greatly enhance charge carrier formation by adding specific impurities to the semiconducting material. The energy states of atoms having different electron configurations do not precisely "blend" with the electron bands of the parent semiconductor crystal, causing additional energy levels to form. Some types of impurities will cause extra donor electrons to lurk just beneath the main conduction band of the crystal. These types of impurities are called pentavalent, because they have 5 valence electrons per atom rather than 4 as the parent substance typically possesses: Doped with a…4--N MOSFETs are used in the given circuit. Q1, Q2,….. The parameters of Qn MOS transistors are Vt=1V, γ=0, λ=0,μnCox=200μA/V2 and (W/L)1= (W/L) 2=….=(W/L)n=20 a) VGS=?, ID=?, gm=? b) Find the input and output impedance. c) Find the voltage gain.SOLVE IT IN DETAIL.
- a) State two ways in which a pn junction can be formed. b) Define the metallurgical junction. c) What is a step junction? d) Explain what is meant by a diode or ou junction being: Zero biased. Forward biased. Reverse biased. (ii) (iii) e) Mention two functions of the built-in potential barrier.The formula for the contact potential of a pn-junction diode is given by the formula: NaNa kT - In e a) This contact potential ensures that the net current across the junction is zero. Which side is higher in electron potential energy – the n or the p-side? Briefly explain your answer. b) Even though there is no net current across the pn-junction in equilibrium with no applied voltage (V=0), there are two individual currents associated with electrons that add to zero (and two more associated with holes) – drift and diffusion current. Explain what they are (and how they arise), and give their direction (for electrons). c) Which of the two types of current is independent of Aøo? Briefly explain why.A PN junction in series with a resistor of 100N and current of 100mA flows. If the voltage cross the junction is reversed instantaneously to 10V at t= 0, the reverse current that flows through the diode is a) 50 mA b) 75 mA c) 100 mA d) 200 mA
- The function of zener diode is to provide a constant output voltage to a load. this process is called One types of diodes are typically used for power supply applications which always called In a circuit that composed of a single diode that connects an AC source to a load. the diode acts as function of Zener diode is widely used as1.0 Biased PN Junctions Consider two PN diodes, A and B as depicted below. Suppose the junction area for each diode is 1.0 x10-8 cm² (1 square-micron) P-doped N-doped N = 1016 1/ cm3 Ng = 1017 1/cm³ X, *po Vo в P-doped Na = 1018 1/cm3 N-doped Ng = 1017 1/cm3 Х ро Xno V. a) At VD =0 Volts, which diode has the wider total depletion region width (value (in microns) and what is it? b) At Vp =0 Volts, in which diode the magnitude of the maximum electric field in the depletion region is the largest and what is its value (in V/cm)? c) Under a reverse bias Vp <0, which diode will breakdown first (i.e. at a smaller magnitude of the negative bias).The formula for the contact potential of a pn-junction diode is given by the formula: KT In (NaNa a) This contact potential ensures that the net current across the junction is zero. Which side is higher in electron potential energy – the n or the p-side? Briefly explain your answer. b) Even though there is no net current across the pn-junction in equilibrium with no applied voltage (V=0), there are two individual currents associated with electrons that add to zero (and two more associated with holes) – drift and diffusion current. Explain what they are (and how they arise), and give their direction (for electrons). c) Which of the two types of current is independent of A¢o? Briefly explain why. d) Arguing from the formula above for A$o, give a conceptual reason for the fact that germanium (Ge) diodes have about half the contact potential compared to silicon (Si) diodes, all else being equal (same doping concentrations and temperature). For a photodiode (PV cell), would you choose Si or…
