The table below shows some published values of the growth parameters of SiO2 on silicon. For the dry growth process, the parameter z is already evaluated. Table 4.1 Oxidation coefficients for silicon Dry Wet (640 torr) Temperature (C) A (um) B (um/hr) 7 (hr) A (um) B (um³/hr) 800 920 0.370 0.235 0.165 0.0011 0.0049 1.4 0.50 0.203 0.37 0.076 0.027 1000 0.0117 0.226 0.287 0.510 0.720 0.090 0.027 0.11 1100 1200 0.040 0.045 0.05 a) At a temperature of 1100°C, what starting oxide thickness does this data for the dry oxide growth assume? b) Using the parameters in the above table, determine total thickness if a dry oxidation was carried out for 5 hours at 1100°C. “
The table below shows some published values of the growth parameters of SiO2 on silicon. For the dry growth process, the parameter z is already evaluated. Table 4.1 Oxidation coefficients for silicon Dry Wet (640 torr) Temperature (C) A (um) B (um/hr) 7 (hr) A (um) B (um³/hr) 800 920 0.370 0.235 0.165 0.0011 0.0049 1.4 0.50 0.203 0.37 0.076 0.027 1000 0.0117 0.226 0.287 0.510 0.720 0.090 0.027 0.11 1100 1200 0.040 0.045 0.05 a) At a temperature of 1100°C, what starting oxide thickness does this data for the dry oxide growth assume? b) Using the parameters in the above table, determine total thickness if a dry oxidation was carried out for 5 hours at 1100°C. “
Chemistry
10th Edition
ISBN:9781305957404
Author:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Publisher:Steven S. Zumdahl, Susan A. Zumdahl, Donald J. DeCoste
Chapter1: Chemical Foundations
Section: Chapter Questions
Problem 1RQ: Define and explain the differences between the following terms. a. law and theory b. theory and...
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