The table below shows some published values of the growth parameters of SiO2 on silicon. For the dry growth process, the parameter z is already evaluated. Table 4.1 Oxidation coefficients for silicon Dry Wet (640 torr) Temperature (C) A (um) B (um/hr) 7 (hr) A (um) B (um³/hr) 800 920 0.370 0.235 0.165 0.0011 0.0049 1.4 0.50 0.203 0.37 0.076 0.027 1000 0.0117 0.226 0.287 0.510 0.720 0.090 0.027 0.11 1100 1200 0.040 0.045 0.05 a) At a temperature of 1100°C, what starting oxide thickness does this data for the dry oxide growth assume? b) Using the parameters in the above table, determine total thickness if a dry oxidation was carried out for 5 hours at 1100°C. “

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The table below shows some published values of the growth parameters of SiO2 on silicon. For the dry
growth process, the parameter t is already evaluated.
Table 4.1 Oxidation coefficients for silicon
Dry
Wet (640 torr)
Temperature ("C)
A (µm)
B (um'/hr)
T (hr)
A (um)
B (um'/hr)
0.370
0.235
0.165
0.0011
800
920
0.50
0.203
1.4
0.37
0.0049
0.0117
0.027
0.226
0.11
0.05
0.287
0.510
0.720
1000
0.076
1100
1200
0.090
0.040
0.045
0.027
a) At a temperature of 1100°C, what starting oxide thickness does this data for the dry oxide
growth assume?
b) Using the parameters in the above table, determine total thickness if a dry oxidation was carried
out for 5 hours at 1100°C. "
Transcribed Image Text:The table below shows some published values of the growth parameters of SiO2 on silicon. For the dry growth process, the parameter t is already evaluated. Table 4.1 Oxidation coefficients for silicon Dry Wet (640 torr) Temperature ("C) A (µm) B (um'/hr) T (hr) A (um) B (um'/hr) 0.370 0.235 0.165 0.0011 800 920 0.50 0.203 1.4 0.37 0.0049 0.0117 0.027 0.226 0.11 0.05 0.287 0.510 0.720 1000 0.076 1100 1200 0.090 0.040 0.045 0.027 a) At a temperature of 1100°C, what starting oxide thickness does this data for the dry oxide growth assume? b) Using the parameters in the above table, determine total thickness if a dry oxidation was carried out for 5 hours at 1100°C. "
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