The structure of a thin film capacitor is illustrated in Figure Q.2(c). This capacitor consists of two dielectric materials layered in between two thin conducting planes which have similar magnitude of surface charge density, p, C/m². Assuming that the total thickness of the dielectric materials is very small compared to the surface area of the conducting planes, determine (i) The electric field intensity in each region of the dielectric medium. (ii) The potential difference between z = 0 m and z = b + c. (iii) The capacitance per unit area. (iv) The thickness of the Silicon dioxide film b, if the Titanium dioxide film has a thickness of c = 0.5 µm and the thin film capacitor needs to be designed to produce a capacitance of 400 uF/m².
The structure of a thin film capacitor is illustrated in Figure Q.2(c). This capacitor consists of two dielectric materials layered in between two thin conducting planes which have similar magnitude of surface charge density, p, C/m². Assuming that the total thickness of the dielectric materials is very small compared to the surface area of the conducting planes, determine (i) The electric field intensity in each region of the dielectric medium. (ii) The potential difference between z = 0 m and z = b + c. (iii) The capacitance per unit area. (iv) The thickness of the Silicon dioxide film b, if the Titanium dioxide film has a thickness of c = 0.5 µm and the thin film capacitor needs to be designed to produce a capacitance of 400 uF/m².
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Transcribed Image Text:The structure of a thin film capacitor is illustrated in Figure Q.2(c). This capacitor
consists of two dielectric materials layered in between two thin conducting planes
which have similar magnitude of surface charge density, p, C/m². Assuming that
the total thickness of the dielectric materials is very small compared to the surface
area of the conducting planes, determine
(i)
The electric field intensity in each region of the dielectric medium.
(ii)
(iii)
The potential difference between z = 0 m and z = b + c.
The capacitance per unit area.
(iv) The thickness of the Silicon dioxide film b, if the Titanium dioxide film has
a thickness of c = 0.5 µm and the thin film capacitor needs to be designed
to produce a capacitance of 400 µF/m².
Transcribed Image Text:z = b + c
z=0
b
Z
a
Titanium Dioxide, TiO₂
&₁ = 90
Silicon Dioxide, SiO₂
&r=3.9
Figure Q.2(c)
a
Thin Conductor
y
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