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- specimen of sil.con is 0-2mm 2ong und has ucress one Veltimp ressed acvoss is 1300 cm?/v.Sec. find 1- Concentra t,on of Pree electrons. 2- Drift ve lacity. Determine w hether each diode belou is for Ward or reverse biased. lovelt 3 Volt 8 Ve lH - d - -6-1. Summarize how changing the half life voltage and capacitance changes the half life. 2. Include the values found for the half-lives and the % differences. Does the theoretical value lie within the range of precision of your measurements? Explain what causes the differences.Q6 For the pure (intrinsic) germanium in the following figure 2 m M. = 0.36 m2 calculate: V. sec . > Hy = 0.17. v.sec. 1) The drift velocity of the electron and the hole. 2) The conductivity of the germanium if the intrinsic carriers concentration equals ( 2.5x10" / m² ). 3) The total current. w= 0.4 cm d=0.15cm L= 2.5 cm 10 v Ans.) 144– ,68- ,2.12(Qm)",0.005A sec. sec.
- 9. The Sonography Physics formula for Axial Resolution is: A = 0.77m (where n is the number of cycles and Fis the frequency. Solve this formula for n (the number of cycles)MOA silicon crystal diode has maximum allowable value of forwarder current is 634.3 mA. What is the forward power rating?Data from the appendices and the periodic table may be needed for these problems. Mantles for gas lanterns contain thorium, because it forms an oxide that can survive being heated to incandescence for long periods of time. Natural thorium is almost 100% 232Th.
- If power is set to .80, this implies: a) that the Type I error is set to .20 b) that the Type II error is set to .20 c) that the alpha level is set to .08 d) that the beta is .80 as wellQ6/ a- Find the conductivity and resistivity of intrinsic Ge at 300K. b- If n-type impurity is added to the extent of one atom per 10° germanium atoms, find the conductivity and resistivity. Assume the following data; n¡ = 2.5 x 1013 cm-3, Hn = 3800- cm2 V. Sec' cm2 and Number of germanium atoms/ cm3 Hp 1800: V. Sec' = 4.4 x 1022.13 The surfoce temperature of the oun * is obout 6000 K. Accordingly which wovelenght corresponds to the greatest 15 value of the electro etic. rodiotion from the an? Interpret your reaul 16 occor ding to the sensitiuity ofhe humon. ge. 17 18 19
- 4G 75% DI 9:07 SiGeGaAsprope. Prof. O M Khrcis May 2, 2020 : Si, Ge, Ga As Parameters and Universal Constants UNIVERSAL CONSTANTS 6.63 x 10-34 J.s 9.11 x 10-31 Kg Properties SEMICONDUCTOR h Si Ge GaAs E, (eV) n, (cm-3) Hn (cm? /V – s) Pp (cm? /V – s) N. (cm-3) N, (em-3) m:/m. m; /m. E, (F/m) 1.1 0.67 1.42 3.14 1.5 x 1010 2.3 x 1013 1.8 x 106 1.602 x 10-19 C 8.85 x 10-12 F/m 1.05 x 10-34 J – 8 8.6 x 10-5 eV/K 1500 3900 8500 450 1900 400 2.78 x 1019| 1.04 x 1019 | 4.45 x 1017 9.84 x 1018 K 6 x 1018 7.72 x 1018 KT/q 26 mV (T = 300 K) 0.082 0.98 0.067 КТ 26 meV (T = 300 K) 0.28 0.49 0.45 3 x 10° m/s 11.7 16 13.1 Nair = 1 NGaAs = 3.66 Some useful relations EgAl, Ga-rAs(r) = 1.424 + 1.247x Egin, Ga-1Ae(x) = 0.36 + 1.064r 1 eV = 1.602 x 10-19 J 1 KG = 1 x 10-5 Wb/cm? 1 ...If an emitter current is changed by 4mA, the collector current changes by 3.5 mA. The value of β will be: a. 7 b. 0.875 c. 0.5 d. 3.5QUESTION 6 Find the uncertainty in a calculated electrical potential difference from the measurements of current and resistance. Electric potential difference depends on current and resistance according to this function V(I,R) = IR. Your measured current and resistance have the following values and uncertainties 1 = 1.5 Amps, Sl = 0.2 Amps and R = 36.4 Ohms and SR 0.3 Ohms. What is the uncertainty in %3D the , SV ? Units are not needed in your answer.
