The original diode equation was derived by William Shockley in 1949 to model the behaviour of germanium diodes. A few years later it was modified to account for the differences between germanium and silicon diodes by including an ideality factor. This produced the form of the diode equation that you will now be familiar with: 1=1, [exp(-17)-1] 3) Extend your analysis to extract the reverse saturation current under strong forward bias.

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The original diode equation was derived by William Shockley in 1949 to model the
behaviour of germanium diodes. A few years later it was modified to account for the
differences between germanium and silicon diodes by including an ideality factor n. This
produced the form of the diode equation that you will now be familiar with:
eV
1 = 1₁ [exp()-1]
3) Extend your analysis to extract the reverse saturation current under strong forward bias.
VD (V)
0.100
0.150
0.200
0.250
0.300
0.350
0.400
0.450
0.500
0.550
0.600
0.650
0.700
lo (A)
7.47E-11
1.93E-10
6.01E-10
1.54E-09
4.26E-09
1.00E-08
2.56E-08
1.78E-07
1.13E-06
6.48E-06
▬▬▬▬▬▬
4.71E-05
2.74E-04
1.94E-03
Transcribed Image Text:The original diode equation was derived by William Shockley in 1949 to model the behaviour of germanium diodes. A few years later it was modified to account for the differences between germanium and silicon diodes by including an ideality factor n. This produced the form of the diode equation that you will now be familiar with: eV 1 = 1₁ [exp()-1] 3) Extend your analysis to extract the reverse saturation current under strong forward bias. VD (V) 0.100 0.150 0.200 0.250 0.300 0.350 0.400 0.450 0.500 0.550 0.600 0.650 0.700 lo (A) 7.47E-11 1.93E-10 6.01E-10 1.54E-09 4.26E-09 1.00E-08 2.56E-08 1.78E-07 1.13E-06 6.48E-06 ▬▬▬▬▬▬ 4.71E-05 2.74E-04 1.94E-03
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