The fraction of lattice points occupied by vacancies in solid aluminum at 660°C is 10-3 . What is the energy required to create vacancies in aluminum?
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The fraction of lattice points occupied by vacancies in solid aluminum at 660°C is 10-3 . What is the energy required to create vacancies in aluminum?
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- The fraction of lattice points occupied by vacancies in solid aluminium at 660℃ is 10-3 .What is the energy required to create vacancies in aluminium?In solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 x 1017cm-3 and N, = 7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The hole concentration?
- Silicon atoms with a concentration of 7x 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T = 300 K: N. = 4.7 x 1017 cm-3 and N, = 7 x 101cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The donor concentration?Silicon atoms with a concentration of 7× 1010 cm3 are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T= 300 K: N. = 4.7 x 1017cm-3 and N, = 7 x 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. The acceptor concentration?Grüneisen parameter for silicon The silicon crystal (diamond structure) has the following properties at 500 K. The lattice parameter (a) = 0.5440 nm, thermal expansion coefficient (a) = 3.6x106 K-', and the bulk modulus is about the same as that at room temperature (K = 99 GPa). The Debye temperature of Si is 625 K. At room temperature (300 K) its density is 2.33 g cm³, and its lattice constant is 0.5430 nm. Calculate the Grüneisen parameter at 500 K and compare with its value at room temperature in Table 1. Is 3 constant?
- Silicon atoms with a concentration of 7× 1010 cm³ are added to gallium arsenide GaAs at T = 400 K. Assume that the silicon atoms act as fully ionized dopant atoms and that 15% of the concentration added replaces gallium atoms to free electrons and 85% replaces arsenic to create holes. Use the following parameters for GaAs at T=300 K: N. = 4.7 × 1017 cm-3 and N, =7 × 1018cm-3. The bandgap is E, = 1.42 eV and it is constant over the temperature range. Assume the ionization energy for donors is 0.0058 eV. The fraction of total electron that are still in the donor states?Hcp structure. Show that the c/a ratio for an ideal hexagonal closed-packed structure is () = 1.633. If c/a is significantly larger than this value, the crystal structure may be thought of as composed of planes of closely packed atoms, the planes being loosely stacked.The parameters o and & in Lennard-Jones potential in Argon (Ar) crystals are o = 3.40 x 10-10 m and ɛ = 1.67 x 10-21 J. The lattice sums for the BCC (body-centered cubic) structures are E C" Pī12 = 9.11418, ECC Pī = 12.2533, and the lattice sums for the FCC structures are 2CC Pī12 = potential, calculate the equilibrium separation and cohesive energies (in unit of electron voltage or eV) for BCC and FCC configurations. -6 %3| 12.13188, ECC Pi = 14.45392. Using the Lennard-Jones %3D
- At 23° K, the crystal structure transforms from BCC to HCP keeping density same. The cubic face in BCC is a 3.42 A and in HCP is-1.53. The lattice constant in HCP structure is, (n) 2.64 A (b) 3.16 A () 2.16 A (4) 2.42 AIn a cubic lattice, what is the angle (in degrees) between the [010] and [001] directions?The conductivity of an intrinsic silicon sample is found to be 1.02 m.S.m-1 at 297.2 K and 2.15 mS.m-1 at 307.9 K. What is the bandgap energy in silicon? (Boltzmann constant: 1.38064852 * 10-23 m². kg. s-². K−¹) Answer: