The exposed surface (x = 0) of a planar wall of thermal conductivity k is subject to microwave radiation that causes the volumetric heating to vary as: q ̇ (x) = q ̇o (1-x / L) Where qo (W / m ^ 3) is a constant. The boundary of x = L is well insulated, while the exposed surface is kept at a constant temperature T0. Determine the temperature distribution T (x) in terms of x, L, k, q ̇o, and T0.

Introduction to Chemical Engineering Thermodynamics
8th Edition
ISBN:9781259696527
Author:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
Publisher:J.M. Smith Termodinamica en ingenieria quimica, Hendrick C Van Ness, Michael Abbott, Mark Swihart
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The exposed surface (x = 0) of a planar wall of thermal conductivity k is subject to microwave radiation that causes the volumetric heating to vary as:

q ̇ (x) = q ̇o (1-x / L)

Where qo (W / m ^ 3) is a constant. The boundary of x = L is well insulated, while the exposed surface is kept at a constant temperature T0. Determine the temperature distribution T (x) in terms of x, L, k, q ̇o, and T0.

 

 

in the attached image it is in Spanish

2. La superficie expuesta (x = 0) de una pared plana de conductividad térmica k está sujeta a
radiación de microondas que ocasiona que el calentamiento volumétrico varie como:
ģ (x) = 4. (1
Donde 4. (W/m³) es una constante. La frontera dex = L está bien aislada, mientras que la
superficie expuesta se mantiene a una temperatura constante T,. Determine la distribución de
temperaturas T(x) en términos de x, L, k, q, y T,. (3pts)
Transcribed Image Text:2. La superficie expuesta (x = 0) de una pared plana de conductividad térmica k está sujeta a radiación de microondas que ocasiona que el calentamiento volumétrico varie como: ģ (x) = 4. (1 Donde 4. (W/m³) es una constante. La frontera dex = L está bien aislada, mientras que la superficie expuesta se mantiene a una temperatura constante T,. Determine la distribución de temperaturas T(x) en términos de x, L, k, q, y T,. (3pts)
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