The DC biasing circuit of a BJT amplifier circuit is shown in Fig. Q7. The BJT Qi hasẞ = 75 and the collector voltage is required to be Vc = 7 V.IA=VDD = 10 VR₁ =Vin20 μA4 ΚΩQ₁CinVoutR3 =R₂ =17.5 ΚΩ640 ΚΩFig. Q7Assuming the Early effect is negligible, calculate the base, collector, and emittercurrents of the BJT Q₁.Calculate the voltages at the base and emitter terminals of the BJT Q and showwhether the BJT Qi is working in the desired operation mode.Assuming the Early effect is negligible, calculate the small signal parameters gm, 1xand ro of the BJT Q1.

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Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

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The DC biasing circuit of a BJT amplifier circuit is shown in Fig. Q7. The BJT Qi has ß = 75 and the collector voltage is required to be Vc = 7 V. IA= 20 μA↓ VDD = 10 V R₁₁ = 4 ΚΩ Cin Vin R₂ = 640 ΚΩ Fig. Q7 Vout R3 = 17.5 ΚΩ (a) What mode of operation should the BJT Q₁ be in for the circuit to work as an amplifier? (b) Assuming the Early effect is negligible, calculate the base, collector, and emitter currents of the BJT Q₁. (c) Calculate the voltages at the base and emitter terminals of the BJT Q and show whether the BJT Qi is working in the desired operation mode.
What is the low frequency break point due to the capacitor Cs for this BJT amplifier (Amplifier A)? Amplifier A: A common-emitter, voltage divider bias circuit with bypass capacitor with the following values: Vcc=25.6V, Rs = 8002, R₁ = 82k 2, R₂ = 12.5k 2, Rc = 2.2k2, RE 1.1k 2, B = 100, Cs = 0.5uF, Cc = 0.2uF, CE = 10uF, and R₁ = 5.2k 02. = 4.269 Hz 25 Hz 4 Hz 30.6 Hz
For the follower circuit, let transistor Q1 have β = 50 and transistor Q2 have β = 100, and neglect the effect for ro. Use VBE = 0,7V. Find the dc emitter currents of Q1 and Q2. Also, find the dc voltages Vb1 and Vb2.
A BJT amplifier circuit is shown in Fig. 1(c). Determine the biasing voltage VgB such that, Vce = 6 V of the circuit. Assume that Vbe(on) = 0.7 V and ß = 80. Vcc = 12 V Ic] Rc=2.2 k2 R1 = 15 k2 IB VCE VBB R2 = 10 kQ
Please solve with steps
For the BJT amplifier below, VCEQ = 6.75 V, IEQ= 2.51mA, VRC = 6.74 V, Vcc = 16V, B of the Si transistor is 160 and ro = infinity. +Vcc VRC: Rc C2 VCE V o The base resistor, RB is equivalent to resistors. Q using commercially available 910K 820K 750K in series with 120K 680K in series with 180K
From the circuit of common source JFET amplifier shown in the figure below, Given: Vp= 4V, IDSS=2mA. If you need this amplifier to be biased with ID=0.5mA, VDD=20V, and voltage gain of 20dB, a)Find the required value of RS, and RD? b)What will happen to the output if the capacitor C2 opens.
-Vcc Ri Rc Ro Re Re Vs O Ra Fig. 1 (b) Using the resistor values calculated in Fig. 1, and any relevant data, with Rs = 50, R1 = 750, do the following. i. Draw the small signal equivalent circuit. ii. Calculate the a. gain of the transistor Av b. gain with signal Avs c. If Vs is specified as 10Vsinwt, what will be the output voltage Vo d. Draw the input Vs + Vo on the same graph wht
Answer number 6
Q3: Answer briefly: 1. A certain BJT amplifier exhibits three critical frequencies in its low frequency response: fL1 130 Hz, fL2 167 Hz, and fL3 75 Hz. Which is the dominant critical frequency? 2. Explain why the coupling capacitors do not have a significant effect on gain at sufficiently high-signal frequencies 3. Why is there not a Miller effect in a common-base circuit? 4. What components do you need to construct a basic instrumentation amplifier? 5. Why is the output of a log amplifier limited to about 0.7 V?
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7.5k2 Q4 5 ΚΩ, Q₁ -15V +15V :5K2 Voz Q₂ 5KR -oVoz K₂Q3 1.2KS2 Consider the BJT differential amplifier on the left. The transistor parameters are: Bn = 180; VBE (on) = 0.65V; and VA = 60V. Do NOT ignore intrinsic output resistances. V03 (a) Calculate the differential gain Ad Va Vos = (b) Calculate the common-mode gain Acm Vem (c) Determine the output voltage Vos if v₁ = 2.015 sinct and v₂ = 1.985 sin wt. (d) Determine the differential-mode and common-mode input resistances.

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