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- In a bipolar junction transistor: A) all the three regions (the emitter, the base and the collector) have equal concentrations of impurity B) the emitter has the least concentration of impurity C) the collector has the least concentration of impurity D) the base has the least concentration of impurityA PN junction in series with a resistor of 100N and current of 100mA flows. If the voltage cross the junction is reversed instantaneously to 10V at t= 0, the reverse current that flows through the diode is a) 50 mA b) 75 mA c) 100 mA d) 200 mADetermine the voltage across the diode in Figure below, assuming silicon diode IM+ 5 V Μ 10 Ho 8 V -31 Ο 7V O ον Ο 4v Ο
- What difficulties can designers and manufacturers have when working with semiconductors containing billions of transistors on a single die?4) a) Using the characteristics of the diode given determine ID and VD for the circuit of given figure.2+2+4 b) Repeat part (a) with R = 0.47 kΩ2+2+4 c) Repeat part (a) with R = 0.68 kQ22+2+4 6 V R20.2 k V₂ (mA 10 11 12 V (V)Household wiring is made with: Group of answer choices semiconductors inside conductors. insulators inside conductors. semiconductors inside insulators inside conductors. conductors inside insulators.
- 2.) Is the total concentration of current carriers (free electrons and holes) in a semicon- ductor equal to the concentration of valence electrons? 3.) There are two types of current carriers in semiconductors (free electrons and holes) and only one type in metals. Yet, metals are much better conductors of electric current. Is this because the currents of electrons and holes oppose each other?5. Please select the correct answer: (a) Acceleration of a free electron and its collision with the host atoms and ionize them in solid, which leads to electron avalanche breakdown. (b) The flow of a substantial current between the electrodes, which appears as a (II) Dielectric strength short between the electrodes when the voltage across a dielectric material exceeds from a critical voltage. (c) The gradual growth of microstructural voids, cracks, or pores within the dielectric due to partial discharge, which leads to electrical tree type of discharge. (d) The maximum field that can be applied to an insulating medium without causing dielectric breakdown. (I) Dielectric breakdown (III) Intrinsic Breakdown (IV) Internal DischargesRe 14.4 V 11.4 V Rg 8 kohm 12 kohm 12 V 20 V le(mA) A !g-1.425 mA Vee(Volt) Answer the questions given below, since they are taken from the circuit next to the output chart given above a) What common transistor configuration is the given circuit diagram? b) what type is the given transistor? NPN or PNP? Specify