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TABLE 4.6 MOS Transistor Parameters NMOS DEVICE PMOS DEVICE VTO +0.75 V -0.75 V 0.75 V 0.5/V 20F 0.6 V 0.6 V K' 100 μΑ/V2 40 μ.Α/V Eox =3.9ɛ, and Es =11.7ɛ, where ɛ, =8.854 × 10-14 F/cm %3D 44 Calculate K, for an NMOS transistor with u, = 500 cm²/V · s for an oxide thickness of (a) 40 nm, (b) 20 nm, (c) 10 nm, and (d) 5 nm.

TABLE 4.6 MOS Transistor Parameters NMOS DEVICE PMOS DEVICE VTO +0.75 V -0.75 V 0.75 V 0.5/V 20F 0.6 V 0.6 V K' 100 μΑ/V2 40 μ.Α/V Eox =3.9ɛ, and Es =11.7ɛ, where ɛ, =8.854 × 10-14 F/cm %3D 44 Calculate K, for an NMOS transistor with u, = 500 cm²/V · s for an oxide thickness of (a) 40 nm, (b) 20 nm, (c) 10 nm, and (d) 5 nm.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
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2.    Text Problems 4.4 and 4.8 for NMOS and Text Problem 4.47 for PMOS Some additional basic calculations to provide experience in units and nomenclature. Organize your results in a table. Page 160 (NMOS) and 161 (PMOS) has a table defining the relationships for key FET model parameters.

**MOS Transistor Parameters** **Table 4.6** outlines the parameters for NMOS and PMOS devices: - **NMOS Device:** - \( V_{T0} = +0.75 \, V \) - \( \gamma = 0.75 \sqrt{V} \) - \( 2\phi_F = 0.6 \, V \) - \( K' = 100 \, \mu A/V^2 \) - **PMOS Device:** - \( V_{T0} = -0.75 \, V \) - \( \gamma = 0.5 \sqrt{V} \) - \( 2\phi_F = 0.6 \, V \) - \( K' = 40 \, \mu A/V^2 \) The permittivities are given as: - \( \varepsilon_{ox} = 3.9\varepsilon_0 \) and \( \varepsilon_s = 11.7\varepsilon_0 \) where \( \varepsilon_0 = 8.854 \times 10^{-14} \, F/cm \). --- **Exercises:** 4.4. **NMOS Transistor Calculation:** - Calculate \( K'_n \) for an NMOS transistor with \( \mu_n = 500 \, cm^2/V \cdot s \) for an oxide thickness of: - (a) 40 nm - (b) 20 nm - (c) 10 nm - (d) 5 nm 4.8. **NMOS Transistor Parameter \( K_n \) Calculation:** - Given \( K'_n = 200 \, \mu A/V^2 \), find the value of \( K_n \) for: - \( W = 60 \, \mu m \), \( L = 3 \, \mu m \) - \( W = 10 \, \mu m \), \( L = 0.25 \, \mu m \) - \( W = 3 \, \mu m \), \( L = 40 \, nm \) 4.3 **PMOS Transistor Calculation:** - Calculate \( K'_p \) for a PMOS transistor with \( \mu
Transcribed Image Text:**MOS Transistor Parameters** **Table 4.6** outlines the parameters for NMOS and PMOS devices: - **NMOS Device:** - \( V_{T0} = +0.75 \, V \) - \( \gamma = 0.75 \sqrt{V} \) - \( 2\phi_F = 0.6 \, V \) - \( K' = 100 \, \mu A/V^2 \) - **PMOS Device:** - \( V_{T0} = -0.75 \, V \) - \( \gamma = 0.5 \sqrt{V} \) - \( 2\phi_F = 0.6 \, V \) - \( K' = 40 \, \mu A/V^2 \) The permittivities are given as: - \( \varepsilon_{ox} = 3.9\varepsilon_0 \) and \( \varepsilon_s = 11.7\varepsilon_0 \) where \( \varepsilon_0 = 8.854 \times 10^{-14} \, F/cm \). --- **Exercises:** 4.4. **NMOS Transistor Calculation:** - Calculate \( K'_n \) for an NMOS transistor with \( \mu_n = 500 \, cm^2/V \cdot s \) for an oxide thickness of: - (a) 40 nm - (b) 20 nm - (c) 10 nm - (d) 5 nm 4.8. **NMOS Transistor Parameter \( K_n \) Calculation:** - Given \( K'_n = 200 \, \mu A/V^2 \), find the value of \( K_n \) for: - \( W = 60 \, \mu m \), \( L = 3 \, \mu m \) - \( W = 10 \, \mu m \), \( L = 0.25 \, \mu m \) - \( W = 3 \, \mu m \), \( L = 40 \, nm \) 4.3 **PMOS Transistor Calculation:** - Calculate \( K'_p \) for a PMOS transistor with \( \mu
**NMOS Transistor Mathematical Model Summary** Equations (4.25) through (4.29) represent the complete model for the \( i-v \) behavior of the NMOS transistor. **For all regions:** - \( K_n = K_n' \frac{W}{L} \) - \( K_n' = \mu_n C_{ox} \) - \( i_G = 0 \) - \( i_B = 0 \) \hfill (4.25) **Cutoff region:** - \( i_D = 0 \) for \( v_{GS} \leq V_{TN} \) \hfill (4.26) **Triode region:** \[ i_D = K_n \left( v_{GS} - V_{TN} - \frac{v_{DS}}{2} \right) v_{DS} \quad \text{for} \quad v_{GS} - V_{TN} \geq v_{DS} \geq 0 \] \hfill (4.27) **Saturation region:** \[ i_D = \frac{K_n}{2} (v_{GS} - V_{TN})^2 (1 + \lambda v_{DS}) \quad \text{for} \quad v_{DS} \geq (v_{GS} - V_{TN}) \geq 0 \] \hfill (4.28) **Threshold voltage:** \[ V_{TN} = V_{T0} + \gamma \left( \sqrt{v_{SB} + 2\phi_F} - \sqrt{2\phi_F} \right) \] \hfill (4.29) \( V_{TN} > 0 \) for enhancement-mode NMOS transistors. Depletion-mode NMOS devices can also be fabricated, and \( V_{TN} \leq 0 \) for these transistors. **PMOS Transistor Mathematical Model Summary** Equations (4.30) through (4.34) represent the complete model for the \( i-v \) behavior of the PMOS transistor. **For all regions:** - \( K_p = K_p' \frac{W}{L} \) - \( K_p' = \mu_p C_{ox} \) - \( i_G
Transcribed Image Text:**NMOS Transistor Mathematical Model Summary** Equations (4.25) through (4.29) represent the complete model for the \( i-v \) behavior of the NMOS transistor. **For all regions:** - \( K_n = K_n' \frac{W}{L} \) - \( K_n' = \mu_n C_{ox} \) - \( i_G = 0 \) - \( i_B = 0 \) \hfill (4.25) **Cutoff region:** - \( i_D = 0 \) for \( v_{GS} \leq V_{TN} \) \hfill (4.26) **Triode region:** \[ i_D = K_n \left( v_{GS} - V_{TN} - \frac{v_{DS}}{2} \right) v_{DS} \quad \text{for} \quad v_{GS} - V_{TN} \geq v_{DS} \geq 0 \] \hfill (4.27) **Saturation region:** \[ i_D = \frac{K_n}{2} (v_{GS} - V_{TN})^2 (1 + \lambda v_{DS}) \quad \text{for} \quad v_{DS} \geq (v_{GS} - V_{TN}) \geq 0 \] \hfill (4.28) **Threshold voltage:** \[ V_{TN} = V_{T0} + \gamma \left( \sqrt{v_{SB} + 2\phi_F} - \sqrt{2\phi_F} \right) \] \hfill (4.29) \( V_{TN} > 0 \) for enhancement-mode NMOS transistors. Depletion-mode NMOS devices can also be fabricated, and \( V_{TN} \leq 0 \) for these transistors. **PMOS Transistor Mathematical Model Summary** Equations (4.30) through (4.34) represent the complete model for the \( i-v \) behavior of the PMOS transistor. **For all regions:** - \( K_p = K_p' \frac{W}{L} \) - \( K_p' = \mu_p C_{ox} \) - \( i_G
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