Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN: 9780133923605
Author: Robert L. Boylestad
Publisher: PEARSON
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2. Text Problems 4.4 and 4.8 for NMOS and Text Problem 4.47 for PMOS Some additional basic calculations to provide experience in units and nomenclature. Organize your results in a table. Page 160 (NMOS) and 161 (PMOS) has a table defining the relationships for key FET model parameters.
Transcribed Image Text:**MOS Transistor Parameters**
**Table 4.6** outlines the parameters for NMOS and PMOS devices:
- **NMOS Device:**
- \( V_{T0} = +0.75 \, V \)
- \( \gamma = 0.75 \sqrt{V} \)
- \( 2\phi_F = 0.6 \, V \)
- \( K' = 100 \, \mu A/V^2 \)
- **PMOS Device:**
- \( V_{T0} = -0.75 \, V \)
- \( \gamma = 0.5 \sqrt{V} \)
- \( 2\phi_F = 0.6 \, V \)
- \( K' = 40 \, \mu A/V^2 \)
The permittivities are given as:
- \( \varepsilon_{ox} = 3.9\varepsilon_0 \) and \( \varepsilon_s = 11.7\varepsilon_0 \) where \( \varepsilon_0 = 8.854 \times 10^{-14} \, F/cm \).
---
**Exercises:**
4.4. **NMOS Transistor Calculation:**
- Calculate \( K'_n \) for an NMOS transistor with \( \mu_n = 500 \, cm^2/V \cdot s \) for an oxide thickness of:
- (a) 40 nm
- (b) 20 nm
- (c) 10 nm
- (d) 5 nm
4.8. **NMOS Transistor Parameter \( K_n \) Calculation:**
- Given \( K'_n = 200 \, \mu A/V^2 \), find the value of \( K_n \) for:
- \( W = 60 \, \mu m \), \( L = 3 \, \mu m \)
- \( W = 10 \, \mu m \), \( L = 0.25 \, \mu m \)
- \( W = 3 \, \mu m \), \( L = 40 \, nm \)
4.3 **PMOS Transistor Calculation:**
- Calculate \( K'_p \) for a PMOS transistor with \( \mu
![**NMOS Transistor Mathematical Model Summary**
Equations (4.25) through (4.29) represent the complete model for the \( i-v \) behavior of the NMOS transistor.
**For all regions:**
- \( K_n = K_n' \frac{W}{L} \)
- \( K_n' = \mu_n C_{ox} \)
- \( i_G = 0 \)
- \( i_B = 0 \) \hfill (4.25)
**Cutoff region:**
- \( i_D = 0 \) for \( v_{GS} \leq V_{TN} \) \hfill (4.26)
**Triode region:**
\[
i_D = K_n \left( v_{GS} - V_{TN} - \frac{v_{DS}}{2} \right) v_{DS} \quad \text{for} \quad v_{GS} - V_{TN} \geq v_{DS} \geq 0
\] \hfill (4.27)
**Saturation region:**
\[
i_D = \frac{K_n}{2} (v_{GS} - V_{TN})^2 (1 + \lambda v_{DS}) \quad \text{for} \quad v_{DS} \geq (v_{GS} - V_{TN}) \geq 0
\] \hfill (4.28)
**Threshold voltage:**
\[
V_{TN} = V_{T0} + \gamma \left( \sqrt{v_{SB} + 2\phi_F} - \sqrt{2\phi_F} \right)
\] \hfill (4.29)
\( V_{TN} > 0 \) for enhancement-mode NMOS transistors. Depletion-mode NMOS devices can also be fabricated, and \( V_{TN} \leq 0 \) for these transistors.
**PMOS Transistor Mathematical Model Summary**
Equations (4.30) through (4.34) represent the complete model for the \( i-v \) behavior of the PMOS transistor.
**For all regions:**
- \( K_p = K_p' \frac{W}{L} \)
- \( K_p' = \mu_p C_{ox} \)
- \( i_G](https://content.bartleby.com/qna-images/question/1b94d5d1-8249-4b1b-8d70-6007d482e8f0/671e1309-67a5-4e8f-ae32-d7f90cb09587/8liksv_processed.png)
Transcribed Image Text:**NMOS Transistor Mathematical Model Summary**
Equations (4.25) through (4.29) represent the complete model for the \( i-v \) behavior of the NMOS transistor.
**For all regions:**
- \( K_n = K_n' \frac{W}{L} \)
- \( K_n' = \mu_n C_{ox} \)
- \( i_G = 0 \)
- \( i_B = 0 \) \hfill (4.25)
**Cutoff region:**
- \( i_D = 0 \) for \( v_{GS} \leq V_{TN} \) \hfill (4.26)
**Triode region:**
\[
i_D = K_n \left( v_{GS} - V_{TN} - \frac{v_{DS}}{2} \right) v_{DS} \quad \text{for} \quad v_{GS} - V_{TN} \geq v_{DS} \geq 0
\] \hfill (4.27)
**Saturation region:**
\[
i_D = \frac{K_n}{2} (v_{GS} - V_{TN})^2 (1 + \lambda v_{DS}) \quad \text{for} \quad v_{DS} \geq (v_{GS} - V_{TN}) \geq 0
\] \hfill (4.28)
**Threshold voltage:**
\[
V_{TN} = V_{T0} + \gamma \left( \sqrt{v_{SB} + 2\phi_F} - \sqrt{2\phi_F} \right)
\] \hfill (4.29)
\( V_{TN} > 0 \) for enhancement-mode NMOS transistors. Depletion-mode NMOS devices can also be fabricated, and \( V_{TN} \leq 0 \) for these transistors.
**PMOS Transistor Mathematical Model Summary**
Equations (4.30) through (4.34) represent the complete model for the \( i-v \) behavior of the PMOS transistor.
**For all regions:**
- \( K_p = K_p' \frac{W}{L} \)
- \( K_p' = \mu_p C_{ox} \)
- \( i_G
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