Solve the lE (Emitter current) of the given circuit. Vcc = 20 V %3D 6.8 k2 220 k2 Vc Cc VB B= 180 56 k2 V, 2.2 k2 I;
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- Date 03175996 28) A battery of emif 4V and grternal. xesistance 2n s joined to a desistor of 8 2 calculate the terminal potential difference. What additional xesistance in sedies with 8-2 sesistor Would produce a texminal pd of 3.6V? Taacher's Signalureier quesuon Will save this response. Quèstion 6 Power supply circuit is delivering 0.5 A and an average voltage 20 V to the load as shown in the circuit below. The ripple voltage of the half wave rectifier is 0.5 V and the diode is represented using constant voltage model. The smoothing capacitor value is equal to iL-DC =05A RL VLDC =20V 220V omsb 0.01 F 0.02 F 0.0167 F Hows b None of the above DEV Chp8 UTM Figure B.1 shows a diode circuit and its DC load line analysis. Based on the SUT information obtained UT UT I kQ + VpQ- 3 UTM UTM Vs 3 500 2 UTM & UM TM &UTM UTM UTM &UTM 5 UTM Figure B.1 UTM & U UTM VD (V) 0.72 UTM i UTM UTM
- QUESTION 3 Find the separation between the Fermi level and the intrinsic level at 300K in silicon in eV if there are 9.551x10^17/cc donors and 2.568x10^17/cc acceptors. Three significant digits and fixed point notation. Type here to searchConsider the circuit shown in the figure below with Ry=13 ko and R=9 kO. The Zener diode voltage is Vz = 3.5 V, then the currents Iz and , respectively, are equal to: R1 ww 20 V O a. 1.280 mA, 0.789 mA O b. 0.680 mA, 0.189 mA O c. 0.880 mA 0.389 mA O d. 1.080 mA, 0.589 mAIn the circuit shown below. Let V-33 V and i,-28 mA and Voo -0.7 V: iD Vcos(at)V For t = 0s, the current in the diode equals: Ca. 0 mA Cb. 2 mA Cc. 4 mA Od. 2 mA Ift = T/4, then the current in the diode equals: Ca. 8.92 mA Ob. 5.71 mA Oc 7.14 mA Od. 4.57 ma Ift- T/2, then the current in the diode equals: Ca. 10.39 mA Cb. 16.39 mA Oc 14.39 mA Od. 12.39 mA
- The "moderate voltage limiting device used in ECG circuitry is made of Oa Gas-discharge tube Ob 2 parallel silicon diodes Oc Back to back Zener diode Od. None of these in which of the following electrode microelectrode the strength of the metal used in it is not important O & Glass micropipette or probe, coated with metal film Ob Metal microelectrodes O None of these Od. Glass-pipet microelectrodeIn the circuit shown below. Let Vm-35 V and i-20 mA and VpQ -0.7 V: iD 3 kQ 0.8 kO Vmcos(@t)V For t Os, the current in the diode equals: Oa. 0 mA Ob. 4 mA Oc. 2 mA Od. 6 mA If t = T/4, then the current in the diode equals: Oa. 6.29 mA Ob. 5.03 mA Oc. 4,03 mA Od. 7.86 mA If t = T/2, then the current in the diode equals: Oa. 15.24 mA Ob. 13.24 mA Oc. 19.24 mA Od. 17.24 mAQ5) a) Calculate the minimum and the maximum input voltages that can be made by the given diode. The data sheet gives: Izmin = 2mA,Izmax=30mA, and Vz = 5 V. b) In which region of I-V characteristic does the diode operate ? Why? c) What is the main function for the given circuit? V1 =OV R1 10052 2 D1 1N5247B
- Silicon BJT (β=120) and Germanium BJT (β=120) VCE in circuitCalculate its value. Comment the circuitIn the circuit shown below, given Vpo = 0.7 V, R, =3KO, R3=4KO, and R3=3 KO, then the diodes operating currents loi and Ioz, respectively, are equal to: %3D IDI DI D2 ID2 RI R2 R3 4V O a. 6.6152 mA, 6.2515mA O b. 0.6152 mA, O.2515mA O c. 2.6152 mA, 2.2515mA O d. 4.6152 mA, 4.2515mA1.62 a) Find the voltage Ve (Ans:uBy) 60V 2015 120v b) How mucn power does the 36A 1200 Source deli ver to the circuit? (AnS: 374.4 w)