Refer to the generic FET figure for this problem. And choose the correct answer inside the parenthesis  (a) If the substrate doping is NA = 5 x 1016 cm-3, the basic structure is (CMOS, PMOS, NMOS, JFET, MESFET) and the inverted channel charge carriers are (HOLES, ELECTRONS, BOTH HOLES AND ELECTRONS, NEUTRONS, PHOTONS). (b) If the substrate doping is changed to be ND = 5 x 1016 cm- 3, the basic structure is (CMOS, PMOS, NMOS, JFET, MESFET) and the inverted channel charge carriers are (HOLES, ELECTRONS, BOTH HOLES AND ELECTRONS, NEUTRONS, PHOTONS) (c) Assume L = 50 nm, W = 500 nm, tox = 200 Å. Units are important!!!!!! Compute Cox and Compute CTotal

Given the internal structure of FET:

a) If the substrate doping is N_A = 5 x 10¹⁶ cm^-3, then we need to find what is the basic structure out of the options( (CMOS, PMOS, NMOS, JFET, MESFET) and also we need to find the inverted channel charge carrier out of the options(HOLES, ELECTRONS, BOTH HOLES AND ELECTRONS, NEUTRONS, PHOTONS).

b)  If the substrate doping is changed to be ND = 5 x 10¹⁶ cm^-3, then we need to find what is the basic structure out of the options( (CMOS, PMOS, NMOS, JFET, MESFET) and also we need to find the inverted channel charge carrier out of the options(HOLES, ELECTRONS, BOTH HOLES AND ELECTRONS, NEUTRONS, PHOTONS).

c) Assuming L = 50 nm, W = 500 nm, tox = 200 Å. We need to compute Cox and C_Total.