Refer to the circuit in figure 1 below: VDD Rp R1 VG Vps VGs Figure 1 The circuit parameters are given as VDD= 10 V, R1= 50 KN, R2= 50 KQ, and RD=2 KQ, and the transistor parameters are K, = 0.1 mA/V² and VrN = 1 V. i. Determine VGand VGs. ii. Calculate Ip. iii. Calculate VDs. ww

4. A Darlington transistor is essentially an array of two transistors connected as shown below. Assume both transistors follow our simple model with a current gain of B=100. Determine the maximum value of R2 that will just saturate the transistors, and pass full current through the load resistance R1. v2 V2 R2 PULSE (0 5 0) Q2 NPN R1 10 Q1 NPN V1 24

c) Figure 2.3 shows the circuit diagram of a typical npn BJT common emitter amplifier. The values of RB1-30 kOhm, RB2=10.XY kOhm, Rc-3.XY kOhm, Ic=2.XY mA and Vcc=24 V. If the transistor current gain 3 = 50 determine using the full analysis and assuming VBE = 0.7 V the value of RE, hence identify the location of the Q-point (Ic, VCE, IB and VBE). Now sketch the AC circuit model of this amplifier and determine the value of the ac open circuit voltage gain Av and the ac short circuit current gain Ai. (Assume that Vth = 26 mV). Vin RB1 Cin lin RB2 -10 Rc VB RE + Vcc Vc Cout VE www li Figure 2.3 Vout Ce ¡out x=1 y=7

An enhancement type N-MOSFET with VT = 2 V that conducts a current ID = 5 mA for VGS = 4 V and VDS = 5 V. What is the value of ID for VGS = 3 V and VDS = 6 V?

VDD = 5 V, and Rin = 500 k2. The transistor parameters are given as VTN1 = 0.7 V, VTP2 = -0.7 V, Kni = 0.4 mA/V?, Kp2 = 2 mA/V?, and A1 =12 = 0. (a) Design the circuit such that the current and voltage values at Q point are: Ipq1 = 0.3 mA, IDQ2 = 0.8 mA, VosQ1 = 3 V, and VpsQ2 = 4 V. The voltage across Rs1 is to be 0.5 V. (b) Draw the small-signal equivalent circuit of the amplifier. (c) Determine the small-signal voltage gain A, = Vo/Vi. %3D VDD Rs2 RD1 R1 Rin =Cs2 M1 M2 oVo Cc R2 Rs1 Cs1 Rp2 Vi (+