R2 = 25k2. Determine the voltage gain VVIN ? So k2 30 kn O a. 7.25 R2 O b. -50.00 10 K2 c. 50.00 40 kr d. -3.12 e. 3.12

Dopant density (cm-³) 1021 1020 1019 1018 1017 1016 10¹5 1014 1013 10¹2, 10-4 10-3 10-¹ 10⁰ 10¹ 10² 10³ 104 Resistivity (ohm-cm) FIGURE 2-8 Conversion between resistivity and dopant density of silicon at room temperature. (After [3].) N type 10-2 P type EXAMPLE 2-3 Temperature Dependence of Resistance a. What is the resistivity, p, of silicon doped with 10¹7cm-3 of arsenic? b. What is the resistance, R, of a piece of this silicon material 1 um long and 0.1 μm² in cross-sectional area? c. By what factor will R increase (or decrease) from T = 300 K to T = 400 K? d. What As concentration should one choose if she wishes to minimize the change in (c)?

Find V in the circuit shown in Figure P272. 2.72 FIGURE P2.72 R, 4 kn 2 kl) R. Re 2 kfl 3 k2 R. Rg 2 kll Vs 3 kl2 10 V

subject: Electronic Circuits: Devices and Analysis   course code: ECE 421