Question 9 6.30 An n-type silicon semiconductor, doped at Na = 4 x 10¹6 cm3, is steadily illuminated such that g' = 2 X 1021 cm3 s-¹. Assume To = = 10-s and Tpo = 5 x 10-7 (a) Determine the thermal-equilibrium value of EF - EF. (b) Calculate the quasi- Fermi levels for electrons and holes with respect to EF. (c) What is the difference (in eV) between EFA and EF?

Consider a pure semiconductor material of silicon. At 300 K, the electron concentration in the conduction band is 1016 cm3 and the hole concentration in the valance band is 107 cm3. Assume that the electron and hole concentrations vary as T2. Calculate the intrinsic carrier concentration in silicon at T = 350 K. Note: energy gap of silicon = 1.12 ev Boltzmann constant = 8.61x10-5 eV/K

Please Help ASAP!!! Just do A-C

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