QUESTION 1 What is the hole quasi-Fermi level w.r.t. intrinsic level for silicon crystal at 300K doped with 8.21*10 17/cc Phosphorous atoms and illuminated with 5*10^18 photons/(cc*second), and a minority carrier lifetime of 7.78*10^-9 seconds. Three significant digits and fixed point notation.
QUESTION 1 What is the hole quasi-Fermi level w.r.t. intrinsic level for silicon crystal at 300K doped with 8.21*10 17/cc Phosphorous atoms and illuminated with 5*10^18 photons/(cc*second), and a minority carrier lifetime of 7.78*10^-9 seconds. Three significant digits and fixed point notation.
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